Enhanced metal-induced lateral crystallization in amorphous Ge/Si/SiO 2 layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Metal-induced lateral crystallization (MILC) in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. The MILC velocity of a-Si was successfully increased becoming threefold higher than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas were obtained after 550°C annealing, i.e., ∼10 μm for 5 h and ∼30 μm for 15 h. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large scale integrated circuits.

Original languageEnglish
Pages (from-to)1852-1855
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - Apr 2004

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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