Enhanced low-temperature oxidation of 4H-SiC using SrTi1-xMgxO3-δ

Li Li, Akihiro Ikeda, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution


SrTi1-xMgxO3-δ, an oxidation catalyst, is employed to produce active oxygen species in an oxidation furnace and to enhance oxidation of 4H-SiC at low temperatures. The linear rate constant of the oxidation model at the 4H-SiC (0001)-Si surface at 800~900 °C is enhanced by two orders of magnitude in comparison to the conventional dry oxidation. The catalytic oxidation is, therefore, able to form a gate oxide at temperatures as low as 800°C. Interface state density in the energy range of 0.2~0.5 eV from the conduction band edge of the 4H-SiC oxidized with catalyst at 800°C is almost same as the one oxidized using the conventional dry oxidation at 1100 °C.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2016
EditorsKonstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9783035710434
Publication statusPublished - 2017
Event11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 - Halkidiki, Greece
Duration: Sept 25 2016Sept 29 2016

Publication series

NameMaterials Science Forum
Volume897 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


Other11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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