TY - JOUR
T1 - Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates
AU - Sittimart, Phongsaphak
AU - Ohmagari, Shinya
AU - Yoshitake, Tsuyoshi
N1 - Funding Information:
This present work was supported in part by JSPS KAKENHI (Grant No. 19K15295). The film preparation involving HFCVD was performed using apparatus provided by the Kansai Bureau of Economy, Trade and Industry. The film characterization and device processing were partly supported by the National Institute of Advanced Industrial Science and Technology (AIST)—Kyushu and Kansai centers. The authors would like to thank all staff at the AIST-Kansai center for their technical support.
Publisher Copyright:
© 2021 The Japan Society of Applied Physics
PY - 2021/5
Y1 - 2021/5
N2 - In this study, pseudo-vertical diamond Schottky barrier diodes (SBDs) were fabricated on heteroepitaxial substrates and a metal impurity-incorporated buffer layer to suppress killer defects was inserted. All SBDs exhibited excellent rectifying actions with suppressed leakage current. The in-plane uniformity was improved after the insertion of the buffer layer. Forward characteristics were fitted by thermionic emission theory and Tung’s model in the temperature range from 300 to 480 K. The perfection of the Schottky-diamond interface is discussed. Moreover, the SBDs exhibited a high breakdown voltage with a sudden increase in current at 375 V, which is the highest value reported for heteroepitaxial diamond. These results indicate that heteroepitaxial substrates are a promising alternative for large-area low-cost diamond electronics.
AB - In this study, pseudo-vertical diamond Schottky barrier diodes (SBDs) were fabricated on heteroepitaxial substrates and a metal impurity-incorporated buffer layer to suppress killer defects was inserted. All SBDs exhibited excellent rectifying actions with suppressed leakage current. The in-plane uniformity was improved after the insertion of the buffer layer. Forward characteristics were fitted by thermionic emission theory and Tung’s model in the temperature range from 300 to 480 K. The perfection of the Schottky-diamond interface is discussed. Moreover, the SBDs exhibited a high breakdown voltage with a sudden increase in current at 375 V, which is the highest value reported for heteroepitaxial diamond. These results indicate that heteroepitaxial substrates are a promising alternative for large-area low-cost diamond electronics.
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U2 - 10.35848/1347-4065/abd537
DO - 10.35848/1347-4065/abd537
M3 - Article
AN - SCOPUS:85099792749
SN - 0021-4922
VL - 60
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - SB
M1 - SBBD05
ER -