Enhanced diffusion of boron in silicon by cw CO2 laser irradiation

H. Yamada-Kaneta, K. Tanahashi, K. Kakimoto, S. Suto

Research output: Contribution to journalArticlepeer-review


We investigated the diffusion of boron (B) by the irradiation with cw CO2 laser light. The enhanced diffusion of B was observed by irradiating with the laser light during annealing in Ar/O2 ambient. We found that irradiation with laser light had the effect of enhancement on the growth of the oxide layer. The possible mechanism is that the excess self-interstitials injected by oxidation at the laser-irradiated point enhance the diffusion of B.

Original languageEnglish
Pages (from-to)1683-1686
Number of pages4
JournalSurface and Interface Analysis
Issue number12-13
Publication statusPublished - Dec 1 2006

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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