Enhanced diffusion of boron in silicon by cw CO2 laser irradiation

H. Yamada-Kaneta; K. Tanahashi; K. Kakimoto; S. Suto

doi:10.1002/sia.2411

Enhanced diffusion of boron in silicon by cw CO₂ laser irradiation

H. Yamada-Kaneta, K. Tanahashi, K. Kakimoto, S. Suto

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the diffusion of boron (B) by the irradiation with cw CO₂ laser light. The enhanced diffusion of B was observed by irradiating with the laser light during annealing in Ar/O₂ ambient. We found that irradiation with laser light had the effect of enhancement on the growth of the oxide layer. The possible mechanism is that the excess self-interstitials injected by oxidation at the laser-irradiated point enhance the diffusion of B.

Original language	English
Pages (from-to)	1683-1686
Number of pages	4
Journal	Surface and Interface Analysis
Volume	38
Issue number	12-13
DOIs	https://doi.org/10.1002/sia.2411
Publication status	Published - Dec 1 2006

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1002/sia.2411

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abstract = "We investigated the diffusion of boron (B) by the irradiation with cw CO2 laser light. The enhanced diffusion of B was observed by irradiating with the laser light during annealing in Ar/O2 ambient. We found that irradiation with laser light had the effect of enhancement on the growth of the oxide layer. The possible mechanism is that the excess self-interstitials injected by oxidation at the laser-irradiated point enhance the diffusion of B.",

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AU - Yamada-Kaneta, H.

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AU - Kakimoto, K.

AU - Suto, S.

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N2 - We investigated the diffusion of boron (B) by the irradiation with cw CO2 laser light. The enhanced diffusion of B was observed by irradiating with the laser light during annealing in Ar/O2 ambient. We found that irradiation with laser light had the effect of enhancement on the growth of the oxide layer. The possible mechanism is that the excess self-interstitials injected by oxidation at the laser-irradiated point enhance the diffusion of B.

AB - We investigated the diffusion of boron (B) by the irradiation with cw CO2 laser light. The enhanced diffusion of B was observed by irradiating with the laser light during annealing in Ar/O2 ambient. We found that irradiation with laser light had the effect of enhancement on the growth of the oxide layer. The possible mechanism is that the excess self-interstitials injected by oxidation at the laser-irradiated point enhance the diffusion of B.

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ER -

Enhanced diffusion of boron in silicon by cw CO₂ laser irradiation

Abstract

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