TY - JOUR
T1 - Enhanced crystal nucleation in a-SiGe/SiO 2 by ion-irradiation assisted annealing
AU - Tsunoda, Isao
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Science, and Technology of Japan.
PY - 2004/3/15
Y1 - 2004/3/15
N2 - Ion beam stimulated solid phase crystallization of a-Si 1-x Ge x (0≤x≤1) on SiO 2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si 1-x Ge x with all Ge fractions (0-100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.
AB - Ion beam stimulated solid phase crystallization of a-Si 1-x Ge x (0≤x≤1) on SiO 2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si 1-x Ge x with all Ge fractions (0-100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.
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U2 - 10.1016/j.apsusc.2003.08.051
DO - 10.1016/j.apsusc.2003.08.051
M3 - Article
AN - SCOPUS:1142268141
SN - 0169-4332
VL - 224
SP - 231
EP - 234
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-4
ER -