Enhanced crystal nucleation in a-SiGe/SiO 2 by ion-irradiation assisted annealing

Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


Ion beam stimulated solid phase crystallization of a-Si 1-x Ge x (0≤x≤1) on SiO 2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150°C for a-Si 1-x Ge x with all Ge fractions (0-100%) by using ion stimulation. As a result, crystal growth below the softening temperature (∼500°C) of glass substrates was achieved for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

Original languageEnglish
Pages (from-to)231-234
Number of pages4
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - Mar 15 2004

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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