TY - JOUR
T1 - Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping
AU - Sadoh, T.
AU - Nagatomo, K.
AU - Tsunoda, I.
AU - Kenjo, A.
AU - Enokida, T.
AU - Miyao, M.
N1 - Funding Information:
A part of this work was supported by the Grant-in-Aid for Scientific Research and the Special Coordination Funds for Promoting Science and Technology (Leading Research Utilizing Potential of Regional Science and Technology) of the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2004/10
Y1 - 2004/10
N2 - The effects of local Ge doping on the crystal nucleation in the solid-phase crystallization (SPC) of a-Si films on SiO2 films were investigated. Three types of sample structures, (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2, and (c) SiO2/a-Ge/a-Si/SiO2, were prepared and annealed at 600 °C. For the structure (a) with a thin (∼5 nm) Ge film, Ge atoms completely diffused into a-Si films, and SPC was not enhanced. On the other hand, for the structure (a) with Ge films thicker than 10 nm, Ge atoms were localized at the initial position. Such abnormal retardation of Ge diffusion was remarkable for the structures (b) and (c) even for samples with thin Ge films. For samples with Ge localization, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in the localized Ge films, and then propagated into a-Si films. The local Ge doping at a-Si/SiO2 interfaces can be employed to selectively induce the nucleation at the interfaces.
AB - The effects of local Ge doping on the crystal nucleation in the solid-phase crystallization (SPC) of a-Si films on SiO2 films were investigated. Three types of sample structures, (a) a-Si/a-Ge/a-Si/SiO2, (b) a-Si/a-Ge/SiO2, and (c) SiO2/a-Ge/a-Si/SiO2, were prepared and annealed at 600 °C. For the structure (a) with a thin (∼5 nm) Ge film, Ge atoms completely diffused into a-Si films, and SPC was not enhanced. On the other hand, for the structure (a) with Ge films thicker than 10 nm, Ge atoms were localized at the initial position. Such abnormal retardation of Ge diffusion was remarkable for the structures (b) and (c) even for samples with thin Ge films. For samples with Ge localization, significant enhancement of SPC of a-Si was observed. These results indicated that crystal nucleation was initiated in the localized Ge films, and then propagated into a-Si films. The local Ge doping at a-Si/SiO2 interfaces can be employed to selectively induce the nucleation at the interfaces.
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U2 - 10.1016/j.tsf.2004.06.010
DO - 10.1016/j.tsf.2004.06.010
M3 - Article
AN - SCOPUS:4544238690
SN - 0040-6090
VL - 464-465
SP - 99
EP - 102
JO - Thin Solid Films
JF - Thin Solid Films
ER -