ENERGY LEVELS OF ELECTRICALLY ACTIVE COBALT IN SILICON.

Hajime Kitagawa; Hiroshi Nakashima; Kimio Hashimoto

ENERGY LEVELS OF ELECTRICALLY ACTIVE COBALT IN SILICON.

Hajime Kitagawa, Hiroshi Nakashima, Kimio Hashimoto

Research output: Contribution to journal › Article › peer-review

Abstract

Hall measurements and combined Hall and DLTS measurements for cobalt-doped n- and p-type silicon are carried out to reveal cobalt levels and cobalt-related levels in silicon. The impurity level assignment of cobalt in silicon, donor or acceptor, is well established. It is found that cobalt has an amphoteric nature in silicon, i. e. cobalt center has neutral, negatively and positively charged states.

Original language	English
Pages (from-to)	119-130
Number of pages	12
Journal	Memoirs of the Kyushu University, Faculty of Engineering
Volume	46
Issue number	2
Publication status	Published - Jun 1986

All Science Journal Classification (ASJC) codes

Energy(all)
Atmospheric Science
Earth and Planetary Sciences(all)
Management of Technology and Innovation

Cite this

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title = "ENERGY LEVELS OF ELECTRICALLY ACTIVE COBALT IN SILICON.",

abstract = "Hall measurements and combined Hall and DLTS measurements for cobalt-doped n- and p-type silicon are carried out to reveal cobalt levels and cobalt-related levels in silicon. The impurity level assignment of cobalt in silicon, donor or acceptor, is well established. It is found that cobalt has an amphoteric nature in silicon, i. e. cobalt center has neutral, negatively and positively charged states.",

author = "Hajime Kitagawa and Hiroshi Nakashima and Kimio Hashimoto",

year = "1986",

month = jun,

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AU - Kitagawa, Hajime

AU - Nakashima, Hiroshi

AU - Hashimoto, Kimio

PY - 1986/6

Y1 - 1986/6

N2 - Hall measurements and combined Hall and DLTS measurements for cobalt-doped n- and p-type silicon are carried out to reveal cobalt levels and cobalt-related levels in silicon. The impurity level assignment of cobalt in silicon, donor or acceptor, is well established. It is found that cobalt has an amphoteric nature in silicon, i. e. cobalt center has neutral, negatively and positively charged states.

AB - Hall measurements and combined Hall and DLTS measurements for cobalt-doped n- and p-type silicon are carried out to reveal cobalt levels and cobalt-related levels in silicon. The impurity level assignment of cobalt in silicon, donor or acceptor, is well established. It is found that cobalt has an amphoteric nature in silicon, i. e. cobalt center has neutral, negatively and positively charged states.

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ENERGY LEVELS OF ELECTRICALLY ACTIVE COBALT IN SILICON.

Abstract

All Science Journal Classification (ASJC) codes

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