TY - JOUR
T1 - Emergence of n-type characteristic of conjugated polymer field-effect transistors with calcium source-drain electrodes
AU - Yasuda, Takeshi
AU - Fujita, Katsuhiko
AU - Tsutsui, Tetsuo
PY - 2004/11
Y1 - 2004/11
N2 - We fabricated field-effect transistors (FETs) using a highly soluble fluorene-based polymer as an active layer utilizing a low-work-function metal, calcium as a source-drain electrode material. The n-type characteristic of polymer FETs was successfully realized by lowering the electron injection barrier, although polymer FETs with gold source-drain electrodes did not exhibit n-type or p-type characteristic. The well-defined n-type FET provides a useful means of measuring the electron transport property of new organic semiconductors.
AB - We fabricated field-effect transistors (FETs) using a highly soluble fluorene-based polymer as an active layer utilizing a low-work-function metal, calcium as a source-drain electrode material. The n-type characteristic of polymer FETs was successfully realized by lowering the electron injection barrier, although polymer FETs with gold source-drain electrodes did not exhibit n-type or p-type characteristic. The well-defined n-type FET provides a useful means of measuring the electron transport property of new organic semiconductors.
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U2 - 10.1143/JJAP.43.7731
DO - 10.1143/JJAP.43.7731
M3 - Article
AN - SCOPUS:11144240465
SN - 0021-4922
VL - 43
SP - 7731
EP - 7732
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 11 A
ER -