Element sensitive atom beam etching based on projectile mass

Y. Watanabe, M. Tanamura

Research output: Contribution to journalArticlepeer-review


A new approach of ion/atom beam etching is proposed, which utilizes the projectile mass dependence of the sputtering process. As a model experiment, we etch YBa 2 Cu 3 O 7-δ films using inert gases having different masses. Various etching characteristics are found to depend evidently on the mass of the gases. Substantial improvements such as 2.5-fold increase of the etching selectivity and the reduction of the etching damage of the etched area are demonstrated by using Kr. A primitive semi-empirical extension of Sigmund theory is proposed, which explains the results indeed as a mass effect and suggests the directions of further improvements. The results show a new important factor in plasma and ion/atom beam etching, which can be useful for realizing artificial structures of metal oxides.

Original languageEnglish
Pages (from-to)287-294
Number of pages8
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - Feb 28 2003

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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