Electroplasticity memory devices using conducting polymers and solid polymer electrolytes

Erasable memory devices are fabricated by the combination of a conducting polymer and solid polymer electrolyte. The former is used as a memory channel and the latter as an electrolyte medium. The channel conductivity can be controlled over 3‐4 orders of magnitude by electrochemical doping through a writing electrode. The response time, depending on the writing voltage, is several seconds. The characteristics of the memory device are discussed.