Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy

Xeniya Kozina; Tino Jaeger; Siham Ouardi; Andrei Gloskowskij; Gregory Stryganyuk; Gerhard Jakob; Takeharu Sugiyama; Eiji Ikenaga; Gerhard H. Fecher; Claudia Felser

doi:10.1063/1.3665621

Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr_0.5Hf_0.5Sn thin films by hard x-ray photoelectron spectroscopy

Xeniya Kozina, Tino Jaeger, Siham Ouardi, Andrei Gloskowskij, Gregory Stryganyuk, Gerhard Jakob, Takeharu Sugiyama, Eiji Ikenaga, Gerhard H. Fecher, Claudia Felser

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr_0.5Hf_0.5Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of "in-gap" states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.

Original language	English
Article number	221908
Journal	Applied Physics Letters
Volume	99
Issue number	22
DOIs	https://doi.org/10.1063/1.3665621
Publication status	Published - Nov 28 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3665621

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title = "Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy",

abstract = "The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr0.5Hf0.5Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of {"}in-gap{"} states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.",

author = "Xeniya Kozina and Tino Jaeger and Siham Ouardi and Andrei Gloskowskij and Gregory Stryganyuk and Gerhard Jakob and Takeharu Sugiyama and Eiji Ikenaga and Fecher, {Gerhard H.} and Claudia Felser",

note = "Funding Information: Financial support by the DFG (Fe633/8-1 and Ja821/4-1 in SPP 1386) is gratefully acknowledged. HAXPES was performed at BL47XU of SPring-8 with approval of JASRI (Proposals Nos. 2011A1464 and 2010A0017). ",

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month = nov,

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doi = "10.1063/1.3665621",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

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T1 - Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy

AU - Kozina, Xeniya

AU - Jaeger, Tino

AU - Ouardi, Siham

AU - Gloskowskij, Andrei

AU - Stryganyuk, Gregory

AU - Jakob, Gerhard

AU - Sugiyama, Takeharu

AU - Ikenaga, Eiji

AU - Fecher, Gerhard H.

AU - Felser, Claudia

N1 - Funding Information: Financial support by the DFG (Fe633/8-1 and Ja821/4-1 in SPP 1386) is gratefully acknowledged. HAXPES was performed at BL47XU of SPring-8 with approval of JASRI (Proposals Nos. 2011A1464 and 2010A0017).

PY - 2011/11/28

Y1 - 2011/11/28

N2 - The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr0.5Hf0.5Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of "in-gap" states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.

AB - The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr0.5Hf0.5Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of "in-gap" states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.

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ER -

Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr_0.5Hf_0.5Sn thin films by hard x-ray photoelectron spectroscopy

Abstract

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