Electronic properties of MOS capacitor exposed to inductively coupled hydrogen plasma

A. Ikeda; T. Sadou; H. Nagashima; K. Kouno; N. Yoshikawa; K. Tshukamoto; Y. Kuroki

doi:10.1016/S0040-6090(99)00062-0

Electronic properties of MOS capacitor exposed to inductively coupled hydrogen plasma

A. Ikeda, T. Sadou, H. Nagashima, K. Kouno, N. Yoshikawa, K. Tshukamoto, Y. Kuroki

Integrated Electronic Systems

Research output: Contribution to journal › Conference article › peer-review

15 Citations (Scopus)

Abstract

Hydrogen plasma is interested for nano-structure cleaning on semiconductor surface at room temperature. We studied the electronic properties of MOS capacitor exposed to hydrogen plasma excited in an Inductively Coupled Plasma (ICP) source. Since ICP can generate plasma with a loop antenna put the outside of a quartz chamber, it does not induce heavy metal contamination. By electrical characterization of MOS capacitor, hydrogen related neutral electron traps were induced into SiO₂ by the hydrogen plasma exposure. With increasing incident ion energy, much more neutral electron traps were induced. XPS chemical analysis suggested that Si-H bonds were formed in SiO₂ with exposure to the hydrogen plasma. It is speculated that under high field stressing to the SiO₂, hydrogenated Si bonds were broken by electron impact and electrons were trapped to the broken bonds in SiO₂. With increasing gas pressure during the hydrogen plasma exposure, electrical degradation of the SiO₂ could be reduced.

Original language	English
Pages (from-to)	172-177
Number of pages	6
Journal	Thin Solid Films
Volume	345
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(99)00062-0
Publication status	Published - May 7 1999
Event	Proceedings of the 1998 11th Symposium on Plasma Science for Materials (SPSM-11) / 4th Asia-Pacific Conference on Plasma Science and Technology (APCPST-4) - Sydney, NSW, Aust Duration: Jul 27 1998 → Jul 29 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(99)00062-0

Cite this

@article{541e924e63964508be38b38cdd25e024,

title = "Electronic properties of MOS capacitor exposed to inductively coupled hydrogen plasma",

abstract = "Hydrogen plasma is interested for nano-structure cleaning on semiconductor surface at room temperature. We studied the electronic properties of MOS capacitor exposed to hydrogen plasma excited in an Inductively Coupled Plasma (ICP) source. Since ICP can generate plasma with a loop antenna put the outside of a quartz chamber, it does not induce heavy metal contamination. By electrical characterization of MOS capacitor, hydrogen related neutral electron traps were induced into SiO2 by the hydrogen plasma exposure. With increasing incident ion energy, much more neutral electron traps were induced. XPS chemical analysis suggested that Si-H bonds were formed in SiO2 with exposure to the hydrogen plasma. It is speculated that under high field stressing to the SiO2, hydrogenated Si bonds were broken by electron impact and electrons were trapped to the broken bonds in SiO2. With increasing gas pressure during the hydrogen plasma exposure, electrical degradation of the SiO2 could be reduced.",

author = "A. Ikeda and T. Sadou and H. Nagashima and K. Kouno and N. Yoshikawa and K. Tshukamoto and Y. Kuroki",

year = "1999",

month = may,

day = "7",

doi = "10.1016/S0040-6090(99)00062-0",

language = "English",

volume = "345",

pages = "172--177",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

note = "Proceedings of the 1998 11th Symposium on Plasma Science for Materials (SPSM-11) / 4th Asia-Pacific Conference on Plasma Science and Technology (APCPST-4) ; Conference date: 27-07-1998 Through 29-07-1998",

}

TY - JOUR

T1 - Electronic properties of MOS capacitor exposed to inductively coupled hydrogen plasma

AU - Ikeda, A.

AU - Sadou, T.

AU - Nagashima, H.

AU - Kouno, K.

AU - Yoshikawa, N.

AU - Tshukamoto, K.

AU - Kuroki, Y.

PY - 1999/5/7

Y1 - 1999/5/7

N2 - Hydrogen plasma is interested for nano-structure cleaning on semiconductor surface at room temperature. We studied the electronic properties of MOS capacitor exposed to hydrogen plasma excited in an Inductively Coupled Plasma (ICP) source. Since ICP can generate plasma with a loop antenna put the outside of a quartz chamber, it does not induce heavy metal contamination. By electrical characterization of MOS capacitor, hydrogen related neutral electron traps were induced into SiO2 by the hydrogen plasma exposure. With increasing incident ion energy, much more neutral electron traps were induced. XPS chemical analysis suggested that Si-H bonds were formed in SiO2 with exposure to the hydrogen plasma. It is speculated that under high field stressing to the SiO2, hydrogenated Si bonds were broken by electron impact and electrons were trapped to the broken bonds in SiO2. With increasing gas pressure during the hydrogen plasma exposure, electrical degradation of the SiO2 could be reduced.

AB - Hydrogen plasma is interested for nano-structure cleaning on semiconductor surface at room temperature. We studied the electronic properties of MOS capacitor exposed to hydrogen plasma excited in an Inductively Coupled Plasma (ICP) source. Since ICP can generate plasma with a loop antenna put the outside of a quartz chamber, it does not induce heavy metal contamination. By electrical characterization of MOS capacitor, hydrogen related neutral electron traps were induced into SiO2 by the hydrogen plasma exposure. With increasing incident ion energy, much more neutral electron traps were induced. XPS chemical analysis suggested that Si-H bonds were formed in SiO2 with exposure to the hydrogen plasma. It is speculated that under high field stressing to the SiO2, hydrogenated Si bonds were broken by electron impact and electrons were trapped to the broken bonds in SiO2. With increasing gas pressure during the hydrogen plasma exposure, electrical degradation of the SiO2 could be reduced.

UR - http://www.scopus.com/inward/record.url?scp=0033531803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033531803&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(99)00062-0

DO - 10.1016/S0040-6090(99)00062-0

M3 - Conference article

AN - SCOPUS:0033531803

SN - 0040-6090

VL - 345

SP - 172

EP - 177

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - Proceedings of the 1998 11th Symposium on Plasma Science for Materials (SPSM-11) / 4th Asia-Pacific Conference on Plasma Science and Technology (APCPST-4)

Y2 - 27 July 1998 through 29 July 1998

ER -

Electronic properties of MOS capacitor exposed to inductively coupled hydrogen plasma

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this