Electron microscopy analysis of microstructure of postannealed aluminum nitride template

Jesbains Kaur; Noriyuki Kuwano; Khairur Rijal Jamaludin; Masatoshi Mitsuhara; Hikaru Saito; Satoshi Hata; Shuhei Suzuki; Hideto Miyake; Kazumasa Hiramatsu; Hiroyuki Fukuyama

doi:10.7567/APEX.9.065502

Electron microscopy analysis of microstructure of postannealed aluminum nitride template

Jesbains Kaur, Noriyuki Kuwano, Khairur Rijal Jamaludin, Masatoshi Mitsuhara, Hikaru Saito, Satoshi Hata, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu, Hiroyuki Fukuyama

Materials Physics and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template was annealed under (N₂ + CO) atmosphere at 1500-1650 °C. TEM characterization was conducted to investigate the microstructural evolution, revealing that the postannealed AlN has a two-layer structure, the upper and lower layers of which exhibit Al and N polarities, respectively. It has been confirmed that postannealing is an effective treatment for controlling the microstructure.

Original language	English
Article number	065502
Journal	Applied Physics Express
Volume	9
Issue number	6
DOIs	https://doi.org/10.7567/APEX.9.065502
Publication status	Published - Jun 2016

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Electron microscopy analysis of microstructure of postannealed aluminum nitride template",

abstract = "The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template was annealed under (N2 + CO) atmosphere at 1500-1650 °C. TEM characterization was conducted to investigate the microstructural evolution, revealing that the postannealed AlN has a two-layer structure, the upper and lower layers of which exhibit Al and N polarities, respectively. It has been confirmed that postannealing is an effective treatment for controlling the microstructure.",

author = "Jesbains Kaur and Noriyuki Kuwano and Jamaludin, {Khairur Rijal} and Masatoshi Mitsuhara and Hikaru Saito and Satoshi Hata and Shuhei Suzuki and Hideto Miyake and Kazumasa Hiramatsu and Hiroyuki Fukuyama",

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doi = "10.7567/APEX.9.065502",

language = "English",

volume = "9",

journal = "Applied Physics Express",

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T1 - Electron microscopy analysis of microstructure of postannealed aluminum nitride template

AU - Kaur, Jesbains

AU - Kuwano, Noriyuki

AU - Jamaludin, Khairur Rijal

AU - Mitsuhara, Masatoshi

AU - Saito, Hikaru

AU - Hata, Satoshi

AU - Suzuki, Shuhei

AU - Miyake, Hideto

AU - Hiramatsu, Kazumasa

AU - Fukuyama, Hiroyuki

PY - 2016/6

Y1 - 2016/6

N2 - The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template was annealed under (N2 + CO) atmosphere at 1500-1650 °C. TEM characterization was conducted to investigate the microstructural evolution, revealing that the postannealed AlN has a two-layer structure, the upper and lower layers of which exhibit Al and N polarities, respectively. It has been confirmed that postannealing is an effective treatment for controlling the microstructure.

AB - The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200nm thickness on a sapphire (0001) substrate by metal-organic vapor phase epitaxy. The AlN template was annealed under (N2 + CO) atmosphere at 1500-1650 °C. TEM characterization was conducted to investigate the microstructural evolution, revealing that the postannealed AlN has a two-layer structure, the upper and lower layers of which exhibit Al and N polarities, respectively. It has been confirmed that postannealing is an effective treatment for controlling the microstructure.

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Electron microscopy analysis of microstructure of postannealed aluminum nitride template

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