Electron field emission from self-organized micro-emitters of sp 3-bonded 5H Boron nitride with very high current density at low electric field

Shojiro Komatsu; Akio Okudo; Daisuke Kazami; Dmitri Golberg; Yubao Li; Yusuke Moriyoshi; Masaharu Shiratani; Katsuyuki Okada

doi:10.1021/jp0493475

Electron field emission from self-organized micro-emitters of sp ³-bonded 5H Boron nitride with very high current density at low electric field

Shojiro Komatsu, Akio Okudo, Daisuke Kazami, Dmitri Golberg, Yubao Li, Yusuke Moriyoshi, Masaharu Shiratani, Katsuyuki Okada

Electronic Devices

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19 Citations (Scopus)

Abstract

Electron field emission with high current density ∼0.9 A/cm² at a low electric field of 8.6 V/μm was achieved by self-organized cone-shaped emitters with dimensions on the order of ∼10 μm made of sp³-bonded 5H boron nitride, which was grown by plasma-assisted chemical vapor deposition with the assistance of 193 nm laser irradiation of the surface. The work function of this material proved to be ∼5 eV, whereas the geometrical field enhancement factor amounts to ∼10⁶ cm ^-1. The known robustness of sp³-bonded BN with its excellent electron emission characteristics and the self-organization of emitter shaped structures may provide new applications for electron emitting devices.

Original language	English
Pages (from-to)	5182-5184
Number of pages	3
Journal	Journal of Physical Chemistry B
Volume	108
Issue number	17
DOIs	https://doi.org/10.1021/jp0493475
Publication status	Published - Apr 29 2004

All Science Journal Classification (ASJC) codes

Physical and Theoretical Chemistry
Surfaces, Coatings and Films
Materials Chemistry

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title = "Electron field emission from self-organized micro-emitters of sp 3-bonded 5H Boron nitride with very high current density at low electric field",

abstract = "Electron field emission with high current density ∼0.9 A/cm2 at a low electric field of 8.6 V/μm was achieved by self-organized cone-shaped emitters with dimensions on the order of ∼10 μm made of sp3-bonded 5H boron nitride, which was grown by plasma-assisted chemical vapor deposition with the assistance of 193 nm laser irradiation of the surface. The work function of this material proved to be ∼5 eV, whereas the geometrical field enhancement factor amounts to ∼106 cm -1. The known robustness of sp3-bonded BN with its excellent electron emission characteristics and the self-organization of emitter shaped structures may provide new applications for electron emitting devices.",

author = "Shojiro Komatsu and Akio Okudo and Daisuke Kazami and Dmitri Golberg and Yubao Li and Yusuke Moriyoshi and Masaharu Shiratani and Katsuyuki Okada",

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T1 - Electron field emission from self-organized micro-emitters of sp 3-bonded 5H Boron nitride with very high current density at low electric field

AU - Komatsu, Shojiro

AU - Okudo, Akio

AU - Kazami, Daisuke

AU - Golberg, Dmitri

AU - Li, Yubao

AU - Moriyoshi, Yusuke

AU - Shiratani, Masaharu

AU - Okada, Katsuyuki

PY - 2004/4/29

Y1 - 2004/4/29

N2 - Electron field emission with high current density ∼0.9 A/cm2 at a low electric field of 8.6 V/μm was achieved by self-organized cone-shaped emitters with dimensions on the order of ∼10 μm made of sp3-bonded 5H boron nitride, which was grown by plasma-assisted chemical vapor deposition with the assistance of 193 nm laser irradiation of the surface. The work function of this material proved to be ∼5 eV, whereas the geometrical field enhancement factor amounts to ∼106 cm -1. The known robustness of sp3-bonded BN with its excellent electron emission characteristics and the self-organization of emitter shaped structures may provide new applications for electron emitting devices.

AB - Electron field emission with high current density ∼0.9 A/cm2 at a low electric field of 8.6 V/μm was achieved by self-organized cone-shaped emitters with dimensions on the order of ∼10 μm made of sp3-bonded 5H boron nitride, which was grown by plasma-assisted chemical vapor deposition with the assistance of 193 nm laser irradiation of the surface. The work function of this material proved to be ∼5 eV, whereas the geometrical field enhancement factor amounts to ∼106 cm -1. The known robustness of sp3-bonded BN with its excellent electron emission characteristics and the self-organization of emitter shaped structures may provide new applications for electron emitting devices.

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Electron field emission from self-organized micro-emitters of sp ³-bonded 5H Boron nitride with very high current density at low electric field

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