Abstract
Electron emission characteristics have been investigated for polycrystalline diamond films with negative electron affinity. Phosphorus-doped diamond films are deposited on Si wafers and Cu plates by hot-filament chemical vapor deposition. An Al/diamond contact is formed on the rear side of the diamond film after removing Si substrates. A significant reduction in the applied electric field for the electron emission is achieved by forming Cu/diamond and Al/diamond contacts in comparison to that of diamond on Si. It is revealed that the electron emission characteristics are dominated by electrons injected into the diamond at the metal/diamond contact.
| Original language | English |
|---|---|
| Pages (from-to) | 889-892 |
| Number of pages | 4 |
| Journal | Diamond and Related Materials |
| Volume | 6 |
| Issue number | 5-7 |
| DOIs | |
| Publication status | Published - Apr 1997 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering