Electron-beam-induced disordering of the Si(001)-c(4×2) surface structure

Tetsuroh Shirasawa, Seigi Mizuno, Hiroshi Tochihara

    Research output: Contribution to journalArticlepeer-review

    21 Citations (Scopus)


    An electron beam (EB) irradiation effect on the Si(001)-c(4×2) surface was investigated by using low-energy electron diffraction. Quarter-order spots become dim and streaky by EB irradiation below ∼40K, indicating a disordering in the c(4×2) arrangement of buckled dimers. A quantitative analysis of decreasing rates of the spot intensity at various conditions of beam current, beam energy, and substrate temperature leads to a proposal for a mechanism of the disordering in the buckled-dimer arrangement in terms of electronic excitation, electron-phonon coupling, and carrier concentration.

    Original languageEnglish
    Article number195502
    JournalPhysical review letters
    Issue number19
    Publication statusPublished - May 20 2005

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)


    Dive into the research topics of 'Electron-beam-induced disordering of the Si(001)-c(4×2) surface structure'. Together they form a unique fingerprint.

    Cite this