Electron-beam exposure(ebe) and epitaxy of gaas films on caf2/si structures

Hee Chul Lee, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


A novel heteroepitaxial method (electron-beam exposure and epitaxy: EBE-epitaxy) has been developed for growing GaAs films on top of CaF2/Si(111) structures. In this method, the surface of CaF2 films is modified by an electron beam (e-beam) under arsenic impingement prior to the growth of GaAs films. It has been found that this EBE-epitaxy is very effective in improving the quality of the GaAs films such as surface morphology, crystallinity and crystallographic orientation. The principal effects in the EBE-epitaxy to improve the crystalline quality are considered based on these experimental results to derive a model of the growth mechanism. Other effects, such as electron energy dependence, substrate temperature dependence during e-beam exposure and GaAs growth temperature dependence, are also investigated systematically. Subsequently, the growth condition for an ideal EBE-epitaxy is discussed.

Original languageEnglish
Pages (from-to)1616-1625
Number of pages10
JournalJapanese journal of applied physics
Issue number9 R
Publication statusPublished - Sept 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Electron-beam exposure(ebe) and epitaxy of gaas films on caf2/si structures'. Together they form a unique fingerprint.

Cite this