Electroluminescence from ZnO nanowire-based heterojunction LED

D. Nakamura, N. Tetsuyama, T. Shimogaki, M. Higashihata, H. Ikenoue, T. Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We have demonstrated that fabrication of the ZnO nanowire/GaN hetero-junction light emitting diode (LED) by contacting the tip of the ZnO nanowires with the GaN film, and UV electroluminescence from the p-n junction. In this study, we fabricated the heterojunction by directly-growth of the ZnO nanowires on the GaN film using nanoparticleassisted pulsed laser deposition. Photoluminescence spectrum of the ZnO nanowires showed a weak near-band-edge ultraviolet (UV) emission and a visible broad emission, which was related to transition by ZnO defect state. We applied a selective laser irradiation to the p-n junction of the ZnO-based LED. The UV emission was strongly enhanced from the laser-irradiated p-n junction.

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices V
ISBN (Print)9780819499004
Publication statusPublished - 2014
Event5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United States
Duration: Feb 2 2014Feb 5 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


Other5th Annual Oxide Based Materials and Devices Conference
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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