Abstract
Electric transport properties have been studied for Fe3O 4 thin films with current perpendicular to plane geometry, aiming at development of oxide spintronics devices. Excellent conductivity comparable to a bulk single crystal was attained by optimizing an under layer material and film deposition condition. A novel conductivity switching, up to three orders of magnitude, was observed. The threshold value of electric field for switching and its temperature dependence were investigated.
Original language | English |
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Pages (from-to) | 85-88 |
Number of pages | 4 |
Journal | Research Reports on Information Science and Electrical Engineering of Kyushu University |
Volume | 9 |
Issue number | 2 |
Publication status | Published - Sept 1 2004 |
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering