TY - GEN
T1 - Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology
AU - Li, Ling Han
AU - Takigawa, Ryo
AU - Higo, Akio
AU - Higurashi, Eiji
AU - Sugiyama, Masakazu
AU - Nakano, Yoshiaki
PY - 2010
Y1 - 2010
N2 - The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire to InGaAsP MQW material for spontaneous light emission was successfully demonstrated afterwards.
AB - The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire to InGaAsP MQW material for spontaneous light emission was successfully demonstrated afterwards.
UR - http://www.scopus.com/inward/record.url?scp=77955941456&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955941456&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2010.5516245
DO - 10.1109/ICIPRM.2010.5516245
M3 - Conference contribution
AN - SCOPUS:77955941456
SN - 9781424459209
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 385
EP - 388
BT - 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
T2 - 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Y2 - 31 May 2010 through 4 June 2010
ER -