Electrical pumping Fabry-Perot lasing of a III-V layer on a highly doped silicon micro rib

Linghan Li; Ryo Takigawa; Akio Higo; Eiji Higurashi; Masakazu Sugiyama; Bingyao Liu; Yoshiaki Nakano

doi:10.1088/1612-2011/11/11/115807

Electrical pumping Fabry-Perot lasing of a III-V layer on a highly doped silicon micro rib

Linghan Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Bingyao Liu, Yoshiaki Nakano

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Direct-current-pumped Fabry-Perot lasing was observed from a Si/III-V hybrid laser fabricated by the Ar/O₂ plasma assisted direct bonding of an InP-based III-V active layer on a highly doped silicon micro rib. Electrical pumping from a silicon micro rib to InGaAsP multiple quantum wells (MQWs) for generating CW Fabry-Perot lasing was successfully demonstrated at a threshold current of 65 mA at 5 °C. The semiconductive and optical properties of the hetero-junction between the silicon micro rib and InGaAsP MQWs under direct current injection were measured and discussed.

Original language	English
Article number	115807
Journal	Laser Physics Letters
Volume	11
Issue number	11
DOIs	https://doi.org/10.1088/1612-2011/11/11/115807
Publication status	Published - Nov 1 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Instrumentation
Physics and Astronomy (miscellaneous)

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10.1088/1612-2011/11/11/115807

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title = "Electrical pumping Fabry-Perot lasing of a III-V layer on a highly doped silicon micro rib",

abstract = "Direct-current-pumped Fabry-Perot lasing was observed from a Si/III-V hybrid laser fabricated by the Ar/O2 plasma assisted direct bonding of an InP-based III-V active layer on a highly doped silicon micro rib. Electrical pumping from a silicon micro rib to InGaAsP multiple quantum wells (MQWs) for generating CW Fabry-Perot lasing was successfully demonstrated at a threshold current of 65 mA at 5 °C. The semiconductive and optical properties of the hetero-junction between the silicon micro rib and InGaAsP MQWs under direct current injection were measured and discussed.",

author = "Linghan Li and Ryo Takigawa and Akio Higo and Eiji Higurashi and Masakazu Sugiyama and Bingyao Liu and Yoshiaki Nakano",

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T1 - Electrical pumping Fabry-Perot lasing of a III-V layer on a highly doped silicon micro rib

AU - Li, Linghan

AU - Takigawa, Ryo

AU - Higo, Akio

AU - Higurashi, Eiji

AU - Sugiyama, Masakazu

AU - Liu, Bingyao

AU - Nakano, Yoshiaki

PY - 2014/11/1

Y1 - 2014/11/1

N2 - Direct-current-pumped Fabry-Perot lasing was observed from a Si/III-V hybrid laser fabricated by the Ar/O2 plasma assisted direct bonding of an InP-based III-V active layer on a highly doped silicon micro rib. Electrical pumping from a silicon micro rib to InGaAsP multiple quantum wells (MQWs) for generating CW Fabry-Perot lasing was successfully demonstrated at a threshold current of 65 mA at 5 °C. The semiconductive and optical properties of the hetero-junction between the silicon micro rib and InGaAsP MQWs under direct current injection were measured and discussed.

AB - Direct-current-pumped Fabry-Perot lasing was observed from a Si/III-V hybrid laser fabricated by the Ar/O2 plasma assisted direct bonding of an InP-based III-V active layer on a highly doped silicon micro rib. Electrical pumping from a silicon micro rib to InGaAsP multiple quantum wells (MQWs) for generating CW Fabry-Perot lasing was successfully demonstrated at a threshold current of 65 mA at 5 °C. The semiconductive and optical properties of the hetero-junction between the silicon micro rib and InGaAsP MQWs under direct current injection were measured and discussed.

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DO - 10.1088/1612-2011/11/11/115807

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ER -

Electrical pumping Fabry-Perot lasing of a III-V layer on a highly doped silicon micro rib

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