Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Kaoru Toko; Isakane Nakao; Taizoh Sadoh; Takashi Noguchi; Masanobu Miyao

doi:10.1016/j.sse.2009.08.002

Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Kaoru Toko
, Isakane Nakao
, Taizoh Sadoh
, Takashi Noguchi
, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

155 Citations (Scopus)

Abstract

The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low-temperature annealing (425 °C) to obtain large grains and subsequent high-temperature annealing (500 °C) to decrease defects, is proposed. The hole concentration remarkably decreased from 1 × 10¹⁸ to 5 × 10¹⁷cm^-3 with keeping a high-mobility (140 cm²/Vs) after post-annealing.

Original language	English
Pages (from-to)	1159-1164
Number of pages	6
Journal	Solid-State Electronics
Volume	53
Issue number	11
DOIs	https://doi.org/10.1016/j.sse.2009.08.002
Publication status	Published - Jun 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2009.08.002

Cite this

@article{397bd92dd4e149b283ae64730c5dba26,

title = "Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization",

abstract = "The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low-temperature annealing (425 °C) to obtain large grains and subsequent high-temperature annealing (500 °C) to decrease defects, is proposed. The hole concentration remarkably decreased from 1 {\texttimes} 1018 to 5 {\texttimes} 1017cm-3 with keeping a high-mobility (140 cm2/Vs) after post-annealing.",

author = "Kaoru Toko and Isakane Nakao and Taizoh Sadoh and Takashi Noguchi and Masanobu Miyao",

note = "Funding Information: The authors are very grateful to Professor H. Nakashima and Dr. D. Wang of Kyushu University for assistance in the Hall measurements. A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.",

year = "2009",

month = jun,

doi = "10.1016/j.sse.2009.08.002",

language = "English",

volume = "53",

pages = "1159--1164",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "11",

}

TY - JOUR

T1 - Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

AU - Toko, Kaoru

AU - Nakao, Isakane

AU - Sadoh, Taizoh

AU - Noguchi, Takashi

AU - Miyao, Masanobu

N1 - Funding Information: The authors are very grateful to Professor H. Nakashima and Dr. D. Wang of Kyushu University for assistance in the Hall measurements. A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.

PY - 2009/6

Y1 - 2009/6

N2 - The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low-temperature annealing (425 °C) to obtain large grains and subsequent high-temperature annealing (500 °C) to decrease defects, is proposed. The hole concentration remarkably decreased from 1 × 1018 to 5 × 1017cm-3 with keeping a high-mobility (140 cm2/Vs) after post-annealing.

AB - The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low-temperature annealing (425 °C) to obtain large grains and subsequent high-temperature annealing (500 °C) to decrease defects, is proposed. The hole concentration remarkably decreased from 1 × 1018 to 5 × 1017cm-3 with keeping a high-mobility (140 cm2/Vs) after post-annealing.

UR - https://www.scopus.com/pages/publications/72049094013

UR - https://www.scopus.com/pages/publications/72049094013#tab=citedBy

U2 - 10.1016/j.sse.2009.08.002

DO - 10.1016/j.sse.2009.08.002

M3 - Article

AN - SCOPUS:72049094013

SN - 0038-1101

VL - 53

SP - 1159

EP - 1164

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Abstract

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