Electrical conductivity measurements of the plasma-polymerized 1-benzothiophene thin film

Satoru Nishio; Tomonari Takeuchi; Yukihito Matsuura; Kazunari Yoshizawa; Kazuyoshi Tanaka; Tokio Yamabe

doi:10.1016/0379-6779(92)90348-M

Electrical conductivity measurements of the plasma-polymerized 1-benzothiophene thin film

Satoru Nishio, Tomonari Takeuchi, Yukihito Matsuura, Kazunari Yoshizawa, Kazuyoshi Tanaka, Tokio Yamabe

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

D.c. and the real part of a.c. (10¹-10⁷ Hz) conductivities of plasma-polymerized 1-benzothiophene (1BT) thin film were measured in the temperature range from 80 to 290 K in order to investigate the conduction mechanism. The iodine-doped sample was also examined. It has been found that d.c. conduction of the pristine sample is ruled by the three-dimensional variable range hopping (3D-VRH) at the lower temperature region (< 160 K) and by the activation process for the nearest-neighbour hopping at the higher temperature region (> 200 K). The quantum-mechanical tunnelling (QMT) process is predominant in a.c. conduction of the pristine sample. The number of a.c. conduction carriers represented by the density of localized states (DOLS) near the Fermi level (that is, N(E_F)) has been found in close proximity to the spin concentrations of both the pristine and iodine-doped samples.

Original language	English
Pages (from-to)	243-250
Number of pages	8
Journal	Synthetic Metals
Volume	46
Issue number	2
DOIs	https://doi.org/10.1016/0379-6779(92)90348-M
Publication status	Published - Feb 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/0379-6779(92)90348-M

Cite this

@article{f066c4e285df463c8dfbcea115f37cb3,

title = "Electrical conductivity measurements of the plasma-polymerized 1-benzothiophene thin film",

abstract = "D.c. and the real part of a.c. (101-107 Hz) conductivities of plasma-polymerized 1-benzothiophene (1BT) thin film were measured in the temperature range from 80 to 290 K in order to investigate the conduction mechanism. The iodine-doped sample was also examined. It has been found that d.c. conduction of the pristine sample is ruled by the three-dimensional variable range hopping (3D-VRH) at the lower temperature region (< 160 K) and by the activation process for the nearest-neighbour hopping at the higher temperature region (> 200 K). The quantum-mechanical tunnelling (QMT) process is predominant in a.c. conduction of the pristine sample. The number of a.c. conduction carriers represented by the density of localized states (DOLS) near the Fermi level (that is, N(EF)) has been found in close proximity to the spin concentrations of both the pristine and iodine-doped samples.",

author = "Satoru Nishio and Tomonari Takeuchi and Yukihito Matsuura and Kazunari Yoshizawa and Kazuyoshi Tanaka and Tokio Yamabe",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan.",

year = "1992",

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doi = "10.1016/0379-6779(92)90348-M",

language = "English",

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pages = "243--250",

journal = "Synthetic Metals",

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T1 - Electrical conductivity measurements of the plasma-polymerized 1-benzothiophene thin film

AU - Nishio, Satoru

AU - Takeuchi, Tomonari

AU - Matsuura, Yukihito

AU - Yoshizawa, Kazunari

AU - Tanaka, Kazuyoshi

AU - Yamabe, Tokio

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture of Japan.

PY - 1992/2

Y1 - 1992/2

N2 - D.c. and the real part of a.c. (101-107 Hz) conductivities of plasma-polymerized 1-benzothiophene (1BT) thin film were measured in the temperature range from 80 to 290 K in order to investigate the conduction mechanism. The iodine-doped sample was also examined. It has been found that d.c. conduction of the pristine sample is ruled by the three-dimensional variable range hopping (3D-VRH) at the lower temperature region (< 160 K) and by the activation process for the nearest-neighbour hopping at the higher temperature region (> 200 K). The quantum-mechanical tunnelling (QMT) process is predominant in a.c. conduction of the pristine sample. The number of a.c. conduction carriers represented by the density of localized states (DOLS) near the Fermi level (that is, N(EF)) has been found in close proximity to the spin concentrations of both the pristine and iodine-doped samples.

AB - D.c. and the real part of a.c. (101-107 Hz) conductivities of plasma-polymerized 1-benzothiophene (1BT) thin film were measured in the temperature range from 80 to 290 K in order to investigate the conduction mechanism. The iodine-doped sample was also examined. It has been found that d.c. conduction of the pristine sample is ruled by the three-dimensional variable range hopping (3D-VRH) at the lower temperature region (< 160 K) and by the activation process for the nearest-neighbour hopping at the higher temperature region (> 200 K). The quantum-mechanical tunnelling (QMT) process is predominant in a.c. conduction of the pristine sample. The number of a.c. conduction carriers represented by the density of localized states (DOLS) near the Fermi level (that is, N(EF)) has been found in close proximity to the spin concentrations of both the pristine and iodine-doped samples.

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JO - Synthetic Metals

JF - Synthetic Metals

IS - 2

ER -

Electrical conductivity measurements of the plasma-polymerized 1-benzothiophene thin film

Abstract

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