Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements

Dong Wang; Masaharu Ninomiya; Masahiko Nakamae; Hiroshi Nakashima

doi:10.1063/1.1891303

Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements

Dong Wang
, Masaharu Ninomiya
, Masahiko Nakamae
, Hiroshi Nakashima

Energy Engineering Sciences

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si) SiGe wafers using deep level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows an independence on St-Si thickness (dSi) and an obvious dependence on Ge fraction (Ge%). τg shows a strong dependence on both dSi and Ge%. The reasons of these dependencies are discussed in detail.

Original language	English
Article number	122111
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	12
DOIs	https://doi.org/10.1063/1.1891303
Publication status	Published - Mar 21 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1891303

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abstract = "Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si) SiGe wafers using deep level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows an independence on St-Si thickness (dSi) and an obvious dependence on Ge fraction (Ge\%). τg shows a strong dependence on both dSi and Ge\%. The reasons of these dependencies are discussed in detail.",

author = "Dong Wang and Masaharu Ninomiya and Masahiko Nakamae and Hiroshi Nakashima",

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T1 - Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements

AU - Wang, Dong

AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

AU - Nakashima, Hiroshi

N1 - Funding Information: This study was partially supported by a Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2005/3/21

Y1 - 2005/3/21

N2 - Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si) SiGe wafers using deep level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows an independence on St-Si thickness (dSi) and an obvious dependence on Ge fraction (Ge%). τg shows a strong dependence on both dSi and Ge%. The reasons of these dependencies are discussed in detail.

AB - Interface states density (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si) SiGe wafers using deep level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. Nss shows an independence on St-Si thickness (dSi) and an obvious dependence on Ge fraction (Ge%). τg shows a strong dependence on both dSi and Ge%. The reasons of these dependencies are discussed in detail.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

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ER -

Electrical characterization of strained Si/SiGe wafers using transient capacitance measurements

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