Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma

Junli Wang, Hiroshi Nakashima, Junsi Gao, Kanako Iwanaga, Katsuhiko Furukawa, Katsunori Muraoka, Youl Moon Sung

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    Epitaxial-type Si n+-p junction diodes were fabricated at a low temperature of 400°C and a conventional vacuum of 5 × 10-7 Torr by using a sputtering-type ECR plasma system. The I-V characteristics of these diodes were assessed. The n+-p junction diodes using the original wafer surfaces as their junction interfaces exhibited a quite low reverse current density of 9.5 × 109 A/cm2 and an ideality factor of 1.05.

    Original languageEnglish
    Pages (from-to)333-336
    Number of pages4
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume19
    Issue number2
    DOIs
    Publication statusPublished - Mar 2001

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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