Abstract
Epitaxial-type Si n+-p junction diodes were fabricated at a low temperature of 400°C and a conventional vacuum of 5 × 10-7 Torr by using a sputtering-type ECR plasma system. The I-V characteristics of these diodes were assessed. The n+-p junction diodes using the original wafer surfaces as their junction interfaces exhibited a quite low reverse current density of 9.5 × 109 A/cm2 and an ideality factor of 1.05.
Original language | English |
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Pages (from-to) | 333-336 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 19 |
Issue number | 2 |
DOIs | |
Publication status | Published - Mar 2001 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering