Electrical characteristics of driver LSI with 35μm thickness for flexible display

Michihiro Asakawa; Takuro Nakashima; Tsubasa Saeki; Reiji Hattori; Akihiko Yokoo; Ryo Sakurai; Norio Nihei; Yoshitomo Masuda

doi:10.1093/ietele/e91-c.10.1570

Electrical characteristics of driver LSI with 35μm thickness for flexible display

Michihiro Asakawa, Takuro Nakashima, Tsubasa Saeki, Reiji Hattori, Akihiko Yokoo, Ryo Sakurai, Norio Nihei, Yoshitomo Masuda

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Electrical characteristics of the mechanically flexible driver LSI as thin as 35μm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.

Original language	English
Pages (from-to)	1570-1575
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E91-C
Issue number	10
DOIs	https://doi.org/10.1093/ietele/e91-c.10.1570
Publication status	Published - Oct 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1093/ietele/e91-c.10.1570

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@article{5e728983f6b0447e91f0920aeca5f0ef,

title = "Electrical characteristics of driver LSI with 35μm thickness for flexible display",

abstract = "Electrical characteristics of the mechanically flexible driver LSI as thin as 35μm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.",

author = "Michihiro Asakawa and Takuro Nakashima and Tsubasa Saeki and Reiji Hattori and Akihiko Yokoo and Ryo Sakurai and Norio Nihei and Yoshitomo Masuda",

year = "2008",

month = oct,

doi = "10.1093/ietele/e91-c.10.1570",

language = "English",

volume = "E91-C",

pages = "1570--1575",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",

number = "10",

}

TY - JOUR

T1 - Electrical characteristics of driver LSI with 35μm thickness for flexible display

AU - Asakawa, Michihiro

AU - Nakashima, Takuro

AU - Saeki, Tsubasa

AU - Hattori, Reiji

AU - Yokoo, Akihiko

AU - Sakurai, Ryo

AU - Nihei, Norio

AU - Masuda, Yoshitomo

PY - 2008/10

Y1 - 2008/10

N2 - Electrical characteristics of the mechanically flexible driver LSI as thin as 35μm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.

AB - Electrical characteristics of the mechanically flexible driver LSI as thin as 35μm mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.

UR - http://www.scopus.com/inward/record.url?scp=77953468125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953468125&partnerID=8YFLogxK

U2 - 10.1093/ietele/e91-c.10.1570

DO - 10.1093/ietele/e91-c.10.1570

M3 - Article

AN - SCOPUS:77953468125

SN - 0916-8524

VL - E91-C

SP - 1570

EP - 1575

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 10

ER -

Electrical characteristics of driver LSI with 35μm thickness for flexible display

Abstract

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