Electrical bistability of organic thin-film device using Ag electrode

Masaya Terai; Katsuhiko Fujita; Tetsuo Tsutsui

doi:10.1143/JJAP.45.3754

Electrical bistability of organic thin-film device using Ag electrode

Masaya Terai, Katsuhiko Fujita, Tetsuo Tsutsui

Department of Advanced Device Materials

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We have fabricated an organic bistable device with the structure of a single organic layer interposed between the bottom Al and the top Ag electrodes, which showed a high reproducibility of electrical bistability. A low impedance state (ON state) appeared when the voltage was ramped up above the threshold voltage V_th and was continuously ramped down to 0 V. On the other hand, a high impedance state (OFF state) appeared when the voltage was ramped up above V_th, and was suddenly set back to 0V. The I-V characteristics of our device were almost similar to those of the device with an organic/metal nanocluster/organic layer as an active medium, reported by Bozano et al. [Appl. Phys. Lett. 84 (2004) 607]. The electrical bistability was observed in the case of using Ag as the top electrode.

Original language	English
Pages (from-to)	3754-3757
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3754
Publication status	Published - Apr 25 2006

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "We have fabricated an organic bistable device with the structure of a single organic layer interposed between the bottom Al and the top Ag electrodes, which showed a high reproducibility of electrical bistability. A low impedance state (ON state) appeared when the voltage was ramped up above the threshold voltage Vth and was continuously ramped down to 0 V. On the other hand, a high impedance state (OFF state) appeared when the voltage was ramped up above Vth, and was suddenly set back to 0V. The I-V characteristics of our device were almost similar to those of the device with an organic/metal nanocluster/organic layer as an active medium, reported by Bozano et al. [Appl. Phys. Lett. 84 (2004) 607]. The electrical bistability was observed in the case of using Ag as the top electrode.",

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AU - Terai, Masaya

AU - Fujita, Katsuhiko

AU - Tsutsui, Tetsuo

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N2 - We have fabricated an organic bistable device with the structure of a single organic layer interposed between the bottom Al and the top Ag electrodes, which showed a high reproducibility of electrical bistability. A low impedance state (ON state) appeared when the voltage was ramped up above the threshold voltage Vth and was continuously ramped down to 0 V. On the other hand, a high impedance state (OFF state) appeared when the voltage was ramped up above Vth, and was suddenly set back to 0V. The I-V characteristics of our device were almost similar to those of the device with an organic/metal nanocluster/organic layer as an active medium, reported by Bozano et al. [Appl. Phys. Lett. 84 (2004) 607]. The electrical bistability was observed in the case of using Ag as the top electrode.

AB - We have fabricated an organic bistable device with the structure of a single organic layer interposed between the bottom Al and the top Ag electrodes, which showed a high reproducibility of electrical bistability. A low impedance state (ON state) appeared when the voltage was ramped up above the threshold voltage Vth and was continuously ramped down to 0 V. On the other hand, a high impedance state (OFF state) appeared when the voltage was ramped up above Vth, and was suddenly set back to 0V. The I-V characteristics of our device were almost similar to those of the device with an organic/metal nanocluster/organic layer as an active medium, reported by Bozano et al. [Appl. Phys. Lett. 84 (2004) 607]. The electrical bistability was observed in the case of using Ag as the top electrode.

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Electrical bistability of organic thin-film device using Ag electrode

Abstract

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