Electrical and Structural Evaluations of Ultrathin SiGe- and Ge-on-insulator Fabricated using Ge Condensation by Dry Oxidation

H. Yang, D. Wang, H. Gao, K. Hirayama, K. Ikeda, S. Hata, H. Nakashima

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	438-439
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2008.p-3-18
Publication status	Published - Sept 25 2008
Event	2008 International Conference on Solid State Devices and Materials (SSDM2008) - Tsukuba International Congress Center, Ibaraki, Japan Duration: Sept 23 2008 → Sept 26 2008

Conference	2008 International Conference on Solid State Devices and Materials (SSDM2008)
Country/Territory	Japan
City	Ibaraki
Period	9/23/08 → 9/26/08

Access to Document

Yang, H, Wang, D , Gao, H, Hirayama, K, Ikeda, K, Hata, S & Nakashima, H 2008, 'Electrical and Structural Evaluations of Ultrathin SiGe- and Ge-on-insulator Fabricated using Ge Condensation by Dry Oxidation', Paper presented at 2008 International Conference on Solid State Devices and Materials (SSDM2008), Ibaraki, Japan, 9/23/08 - 9/26/08 pp. 438-439. https://doi.org/10.7567/ssdm.2008.p-3-18

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author = "H. Yang and D. Wang and H. Gao and K. Hirayama and K. Ikeda and S. Hata and H. Nakashima",

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T1 - Electrical and Structural Evaluations of Ultrathin SiGe- and Ge-on-insulator Fabricated using Ge Condensation by Dry Oxidation

AU - Yang, H.

AU - Wang, D.

AU - Gao, H.

AU - Hirayama, K.

AU - Ikeda, K.

AU - Hata, S.

AU - Nakashima, H.

PY - 2008/9/25

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DO - 10.7567/ssdm.2008.p-3-18

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EP - 439

T2 - 2008 International Conference on Solid State Devices and Materials (SSDM2008)

Y2 - 23 September 2008 through 26 September 2008

ER -