Electrical and Structural Analysis on the Formation of n-type Junction in Germanium

Umar Abdul Aziz, Nur Nadhirah Mohamad Rashid, Siti Rahmah Aid, Anthony Centeno, Hiroshi Ikenoue, Fang Xie

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Germanium (Ge) has re-emerged as a potential candidate to replace silicon (Si) as a substrate, due to its higher carrier mobility properties that are the key point for the realization of devices high drive current. However, the fabrication process of Ge is confronted with many problems such as low dopant electrical activation and the utilization of heavy n-type dopant atoms during ion implantation. These problems result in more damage and defects that can affect dopant activation. This paper reports the electrical and structural analysis on the formation of n-type junction in Ge substrate by ion implantation, followed by excimer laser annealing (ELA) using KrF laser. ELA parameters such as laser fluences were varied from 100 - 2000 mJ/cm2 and shot number between 1 - 1000 to obtain the optimized parameter of ELA with a high degree of damage and defect removal. Low resistance with a high degree of crystallinity is obtained for the samples annealed with less than five shot number. Higher shot number with high laser fluence, shows a high degree of ablation damage.

Original languageEnglish
Article number012003
JournalIOP Conference Series: Materials Science and Engineering
Issue number1
Publication statusPublished - May 25 2017
Event2017 5th International Conference on Nanomaterials and Materials Engineering, ICNME 2017 - Bali, Indonesia
Duration: Apr 1 2017Apr 3 2017

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)


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