Electrical and photovoltaic properties of n-type nanocrystalline-FeSi 2/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature

Mahmoud Shaban; Haruhiko Kondo; Kazuhiro Nakashima; Tsuyoshi Yoshitake

doi:10.1143/JJAP.47.5420

Electrical and photovoltaic properties of n-type nanocrystalline-FeSi ₂/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature

Mahmoud Shaban, Haruhiko Kondo, Kazuhiro Nakashima, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Semiconducting nanocrystalline iron disilicide (NC-FeSi₂) thin films were deposited on Si(111) substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi₂/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current-voltage characteristics, which was predominantly due to the heterojunction interface defects, resulted in a low conversion efficiency.

Original language	English
Pages (from-to)	5420-5422
Number of pages	3
Journal	Japanese journal of applied physics
Volume	47
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.5420
Publication status	Published - Jul 11 2008

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1143/JJAP.47.5420

Cite this

Electrical and photovoltaic properties of n-type nanocrystalline-FeSi ₂/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature. / Shaban, Mahmoud; Kondo, Haruhiko; Nakashima, Kazuhiro et al.
In: Japanese journal of applied physics, Vol. 47, No. 7 PART 1, 11.07.2008, p. 5420-5422.

Research output: Contribution to journal › Article › peer-review

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