Electrical and optical properties of germanium-doped zinc oxide thin films

Makoto Arita, Mayu Yamaguchi, Masataka Masuda

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)


    Germanium-doped zinc oxide thin films with Ge content of 0-8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 × 10-3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.

    Original languageEnglish
    Pages (from-to)3180-3183
    Number of pages4
    JournalMaterials Transactions
    Issue number11
    Publication statusPublished - Nov 2004

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


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