Electrical and optical properties of germanium-doped zinc oxide thin films

Makoto Arita; Mayu Yamaguchi; Masataka Masuda

doi:10.2320/matertrans.45.3180

Electrical and optical properties of germanium-doped zinc oxide thin films

Makoto Arita, Mayu Yamaguchi, Masataka Masuda

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Germanium-doped zinc oxide thin films with Ge content of 0-8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 × 10^-3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.

Original language	English
Pages (from-to)	3180-3183
Number of pages	4
Journal	Materials Transactions
Volume	45
Issue number	11
DOIs	https://doi.org/10.2320/matertrans.45.3180
Publication status	Published - Nov 2004

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{043b5474900f4e3fa8ed2c00a2463cfc,

title = "Electrical and optical properties of germanium-doped zinc oxide thin films",

abstract = "Germanium-doped zinc oxide thin films with Ge content of 0-8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 × 10-3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.",

author = "Makoto Arita and Mayu Yamaguchi and Masataka Masuda",

year = "2004",

month = nov,

doi = "10.2320/matertrans.45.3180",

language = "English",

volume = "45",

pages = "3180--3183",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "The Japan Institute of Metals and Materials",

number = "11",

}

TY - JOUR

T1 - Electrical and optical properties of germanium-doped zinc oxide thin films

AU - Arita, Makoto

AU - Yamaguchi, Mayu

AU - Masuda, Masataka

PY - 2004/11

Y1 - 2004/11

N2 - Germanium-doped zinc oxide thin films with Ge content of 0-8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 × 10-3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.

AB - Germanium-doped zinc oxide thin films with Ge content of 0-8.1 at% were deposited by an RF magnetron sputtering. The electrical and optical properties of the films were investigated. The Ge doping caused the reduction of resistivity of the films, and at about 3% of the Ge content showed the minimum resistivity of about 2 × 10-3 Ωcm. With high content of Ge, however, the crystalline structure changed and the resistivity of the film increased.

UR - http://www.scopus.com/inward/record.url?scp=11844297821&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11844297821&partnerID=8YFLogxK

U2 - 10.2320/matertrans.45.3180

DO - 10.2320/matertrans.45.3180

M3 - Article

AN - SCOPUS:11844297821

SN - 1345-9678

VL - 45

SP - 3180

EP - 3183

JO - Materials Transactions

JF - Materials Transactions

IS - 11

ER -

Electrical and optical properties of germanium-doped zinc oxide thin films

Abstract

All Science Journal Classification (ASJC) codes

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