TY - JOUR
T1 - Electrical and optical characteristics of the layer semiconductor P-Gase doped with Ag
AU - Shigetomi, S.
AU - Ikari, T.
AU - Nakashima, H.
PY - 1997
Y1 - 1997
N2 - Impurity levels in Ag-doped p-GaSe have been studied by using photoluminescence and Hall effect measurements. The PL spectra at 77 K are dominated by two new emission bands at 2.02 and 1.74 eV, From the combined results of Hall effect and PL measurements, it is found that the 2.02 and 1.74 eV emission bands are associated with the same acceptor level at 0.07 eV above the valence band, moreover, the 2.02 and 1.74 eV emission bands are caused by conduction band-acceptor and donor-acceptor transitions, respectively.
AB - Impurity levels in Ag-doped p-GaSe have been studied by using photoluminescence and Hall effect measurements. The PL spectra at 77 K are dominated by two new emission bands at 2.02 and 1.74 eV, From the combined results of Hall effect and PL measurements, it is found that the 2.02 and 1.74 eV emission bands are associated with the same acceptor level at 0.07 eV above the valence band, moreover, the 2.02 and 1.74 eV emission bands are caused by conduction band-acceptor and donor-acceptor transitions, respectively.
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U2 - 10.1002/1521-396X(199703)160:1<159::AID-PSSA159>3.0.CO;2-M
DO - 10.1002/1521-396X(199703)160:1<159::AID-PSSA159>3.0.CO;2-M
M3 - Article
AN - SCOPUS:0031096151
SN - 0031-8965
VL - 160
SP - 159
EP - 164
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 1
ER -