Efficient electron transfer and reduced recombination with Nd:YAG laser scribing for high-efficiency quantum dot-sensitized solar cells

Tao Zheng; Hee Je Kim; Chandu V.V.M. Gopi; Mallineni Venkata-Haritha; Min Kyu Son; Hyunwoong Seo

doi:10.1016/j.optlastec.2017.04.006

Efficient electron transfer and reduced recombination with Nd:YAG laser scribing for high-efficiency quantum dot-sensitized solar cells

Tao Zheng, Hee Je Kim, Chandu V.V.M. Gopi, Mallineni Venkata-Haritha, Min Kyu Son, Hyunwoong Seo

Electronic Devices

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Inefficient charge transfer and charge recombination are critical but challenging issues that restrict the power conversion efficiency (PCE) of quantum-dot-sensitized solar cells (QDSSCs). These issues must be addressed to boost the performance of QDSSCs. We present a novel Nd:YAG laser scribing treatment for fluorine doped tin oxide (FTO) substrate that reduces electron loss by reducing the moving distance of electrons and strongly inhibiting interfacial recombination processes in QDSSCs. Consequently, TiO₂/CdS/CdSe/Mn-ZnSe QDSSCs on the Nd:YAG laser scribed FTO exhibited a PCE of 6.26% under 1 sun (100 mW cm^-2) irradiation, while TiO₂/CdS/CdSe/Mn-ZnSe QDSSCs on the FTO without Nd:YAG laser scribing exhibited a PCE of 5.51%. The short circuit current density and fill factor are also increased after laser scribing, which arises from increased electron transfer with reduced recombination. Electrochemical impedance spectroscopy modeling reveals that the Nd:YAG laser scribed QDSSC has increased charge collection efficiency and reduced interfacial recombination compared with normal QDSSC.

Original language	English
Pages (from-to)	290-295
Number of pages	6
Journal	Optics and Laser Technology
Volume	94
DOIs	https://doi.org/10.1016/j.optlastec.2017.04.006
Publication status	Published - Sept 1 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.optlastec.2017.04.006

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title = "Efficient electron transfer and reduced recombination with Nd:YAG laser scribing for high-efficiency quantum dot-sensitized solar cells",

abstract = "Inefficient charge transfer and charge recombination are critical but challenging issues that restrict the power conversion efficiency (PCE) of quantum-dot-sensitized solar cells (QDSSCs). These issues must be addressed to boost the performance of QDSSCs. We present a novel Nd:YAG laser scribing treatment for fluorine doped tin oxide (FTO) substrate that reduces electron loss by reducing the moving distance of electrons and strongly inhibiting interfacial recombination processes in QDSSCs. Consequently, TiO2/CdS/CdSe/Mn-ZnSe QDSSCs on the Nd:YAG laser scribed FTO exhibited a PCE of 6.26% under 1 sun (100 mW cm-2) irradiation, while TiO2/CdS/CdSe/Mn-ZnSe QDSSCs on the FTO without Nd:YAG laser scribing exhibited a PCE of 5.51%. The short circuit current density and fill factor are also increased after laser scribing, which arises from increased electron transfer with reduced recombination. Electrochemical impedance spectroscopy modeling reveals that the Nd:YAG laser scribed QDSSC has increased charge collection efficiency and reduced interfacial recombination compared with normal QDSSC.",

author = "Tao Zheng and Kim, {Hee Je} and Gopi, {Chandu V.V.M.} and Mallineni Venkata-Haritha and Son, {Min Kyu} and Hyunwoong Seo",

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T1 - Efficient electron transfer and reduced recombination with Nd:YAG laser scribing for high-efficiency quantum dot-sensitized solar cells

AU - Zheng, Tao

AU - Kim, Hee Je

AU - Gopi, Chandu V.V.M.

AU - Venkata-Haritha, Mallineni

AU - Son, Min Kyu

AU - Seo, Hyunwoong

PY - 2017/9/1

Y1 - 2017/9/1

N2 - Inefficient charge transfer and charge recombination are critical but challenging issues that restrict the power conversion efficiency (PCE) of quantum-dot-sensitized solar cells (QDSSCs). These issues must be addressed to boost the performance of QDSSCs. We present a novel Nd:YAG laser scribing treatment for fluorine doped tin oxide (FTO) substrate that reduces electron loss by reducing the moving distance of electrons and strongly inhibiting interfacial recombination processes in QDSSCs. Consequently, TiO2/CdS/CdSe/Mn-ZnSe QDSSCs on the Nd:YAG laser scribed FTO exhibited a PCE of 6.26% under 1 sun (100 mW cm-2) irradiation, while TiO2/CdS/CdSe/Mn-ZnSe QDSSCs on the FTO without Nd:YAG laser scribing exhibited a PCE of 5.51%. The short circuit current density and fill factor are also increased after laser scribing, which arises from increased electron transfer with reduced recombination. Electrochemical impedance spectroscopy modeling reveals that the Nd:YAG laser scribed QDSSC has increased charge collection efficiency and reduced interfacial recombination compared with normal QDSSC.

AB - Inefficient charge transfer and charge recombination are critical but challenging issues that restrict the power conversion efficiency (PCE) of quantum-dot-sensitized solar cells (QDSSCs). These issues must be addressed to boost the performance of QDSSCs. We present a novel Nd:YAG laser scribing treatment for fluorine doped tin oxide (FTO) substrate that reduces electron loss by reducing the moving distance of electrons and strongly inhibiting interfacial recombination processes in QDSSCs. Consequently, TiO2/CdS/CdSe/Mn-ZnSe QDSSCs on the Nd:YAG laser scribed FTO exhibited a PCE of 6.26% under 1 sun (100 mW cm-2) irradiation, while TiO2/CdS/CdSe/Mn-ZnSe QDSSCs on the FTO without Nd:YAG laser scribing exhibited a PCE of 5.51%. The short circuit current density and fill factor are also increased after laser scribing, which arises from increased electron transfer with reduced recombination. Electrochemical impedance spectroscopy modeling reveals that the Nd:YAG laser scribed QDSSC has increased charge collection efficiency and reduced interfacial recombination compared with normal QDSSC.

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Efficient electron transfer and reduced recombination with Nd:YAG laser scribing for high-efficiency quantum dot-sensitized solar cells

Abstract

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