Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films

Makoto Arita; Hirofumi Konishi; Masataka Masuda; Yasunori Hayashi

doi:10.2320/matertrans.43.2670

Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films

Makoto Arita, Hirofumi Konishi, Masataka Masuda, Yasunori Hayashi

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge ≤ 1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge ≥ 4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introductions.

Original language	English
Pages (from-to)	2670-2672
Number of pages	3
Journal	Materials Transactions
Volume	43
Issue number	11
DOIs	https://doi.org/10.2320/matertrans.43.2670
Publication status	Published - Nov 2002

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.2320/matertrans.43.2670

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abstract = "Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge ≤ 1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge ≥ 4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introductions.",

author = "Makoto Arita and Hirofumi Konishi and Masataka Masuda and Yasunori Hayashi",

year = "2002",

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doi = "10.2320/matertrans.43.2670",

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AU - Arita, Makoto

AU - Konishi, Hirofumi

AU - Masuda, Masataka

AU - Hayashi, Yasunori

PY - 2002/11

Y1 - 2002/11

N2 - Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge ≤ 1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge ≥ 4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introductions.

AB - Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge ≤ 1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge ≥ 4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introductions.

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Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films

Abstract

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