TY - JOUR
T1 - Effects of multi-scale defects on the thermoelectric properties of delafossite CuCr1-xMgxO2 materials
AU - Van Hoang, Dung
AU - Thanh Pham, Anh Tuan
AU - Thi Ta, Hanh Kieu
AU - Nguyen, Truong Huu
AU - Pham, Ngoc Kim
AU - Hoa, Lai Thi
AU - Tran, Vinh Cao
AU - Michitaka, Ohtaki
AU - Nhat Tran, Quang Minh
AU - Park, Jong Ho
AU - Lee, Jae Ki
AU - Park, Su Dong
AU - Ju, Tae Seong
AU - Park, Hongjun
AU - Park, Sungkyun
AU - Phan, Thang Bach
N1 - Funding Information:
This work was supported by the Vietnam Ministry of Science and Technology under grant number ĐTĐL.CN-23/18 .
Funding Information:
This work was supported by the Vietnam Ministry of Science and Technology under grant number ?T?L.CN-23/18.
Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/12/5
Y1 - 2020/12/5
N2 - The thermoelectric performance of CuCr1-xMgxO2 materials in terms of multi-scale defects induced at various Mg dopant concentrations (x = 0–0.3) was thoroughly studied in this paper. At 748 K and for x = 0.05, 0.15, and 0.30, we report the following power factors and thermal conductivities: 175, 213, and 2.3 μW/m K2 and 7.85, 5.60, and 3.82 W/m K, respectively. In the low doping regime (x < 0.15), the thermoelectric performance is mainly dependent on hole carriers originated from point defects via Mg substitution on Cr sites, whereas the thermoelectric properties reduce significantly for x ≥ 0.15 due to nanoscale secondary phases (MgCr2O4, Cu2O and CuO) and mesoscale grain boundaries. At 748 K, our CuCr0.85Mg0.15O2 samples exhibit a high figure of merit ZT = 0.028, which is better than those of other CuCr1-xMgxO2 and related delafossite materials. The correlations between the structural and thermoelectric properties of CuCr1-xMgxO2 materials are also discussed in detail.
AB - The thermoelectric performance of CuCr1-xMgxO2 materials in terms of multi-scale defects induced at various Mg dopant concentrations (x = 0–0.3) was thoroughly studied in this paper. At 748 K and for x = 0.05, 0.15, and 0.30, we report the following power factors and thermal conductivities: 175, 213, and 2.3 μW/m K2 and 7.85, 5.60, and 3.82 W/m K, respectively. In the low doping regime (x < 0.15), the thermoelectric performance is mainly dependent on hole carriers originated from point defects via Mg substitution on Cr sites, whereas the thermoelectric properties reduce significantly for x ≥ 0.15 due to nanoscale secondary phases (MgCr2O4, Cu2O and CuO) and mesoscale grain boundaries. At 748 K, our CuCr0.85Mg0.15O2 samples exhibit a high figure of merit ZT = 0.028, which is better than those of other CuCr1-xMgxO2 and related delafossite materials. The correlations between the structural and thermoelectric properties of CuCr1-xMgxO2 materials are also discussed in detail.
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U2 - 10.1016/j.jallcom.2020.156119
DO - 10.1016/j.jallcom.2020.156119
M3 - Article
AN - SCOPUS:85087477776
SN - 0925-8388
VL - 844
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
M1 - 156119
ER -