Effects of low-frequency modulation on rf discharge chemical vapor deposition

Y. Watanabe; M. Shiratani; Y. Kubo; I. Ogawa; S. Ogi

doi:10.1063/1.100445

Effects of low-frequency modulation on rf discharge chemical vapor deposition

Y. Watanabe, M. Shiratani, Y. Kubo, I. Ogawa, S. Ogi

Electronic Devices

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169 Citations (Scopus)

Abstract

Low-frequency square-wave modulation of a rf discharge in silane diluted with a rare gas brought about an improvement in the deposition rate of amorphous hydrogenated silicon films and in the film quality as well as a drastic suppression of powder concentration in the discharge space. These results can be explained by a SiH₃ density in the modulated discharge that is high compared to that without modulation, because of the electron density enhancement resulting from the modulation and also because the lifetime of SiH₃ radicals is much longer than those of SiH_n radicals (n=0-2).

Original language	English
Pages (from-to)	1263-1265
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	14
DOIs	https://doi.org/10.1063/1.100445
Publication status	Published - 1988

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100445

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abstract = "Low-frequency square-wave modulation of a rf discharge in silane diluted with a rare gas brought about an improvement in the deposition rate of amorphous hydrogenated silicon films and in the film quality as well as a drastic suppression of powder concentration in the discharge space. These results can be explained by a SiH3 density in the modulated discharge that is high compared to that without modulation, because of the electron density enhancement resulting from the modulation and also because the lifetime of SiH3 radicals is much longer than those of SiHn radicals (n=0-2).",

author = "Y. Watanabe and M. Shiratani and Y. Kubo and I. Ogawa and S. Ogi",

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AU - Watanabe, Y.

AU - Shiratani, M.

AU - Kubo, Y.

AU - Ogawa, I.

AU - Ogi, S.

PY - 1988

Y1 - 1988

N2 - Low-frequency square-wave modulation of a rf discharge in silane diluted with a rare gas brought about an improvement in the deposition rate of amorphous hydrogenated silicon films and in the film quality as well as a drastic suppression of powder concentration in the discharge space. These results can be explained by a SiH3 density in the modulated discharge that is high compared to that without modulation, because of the electron density enhancement resulting from the modulation and also because the lifetime of SiH3 radicals is much longer than those of SiHn radicals (n=0-2).

AB - Low-frequency square-wave modulation of a rf discharge in silane diluted with a rare gas brought about an improvement in the deposition rate of amorphous hydrogenated silicon films and in the film quality as well as a drastic suppression of powder concentration in the discharge space. These results can be explained by a SiH3 density in the modulated discharge that is high compared to that without modulation, because of the electron density enhancement resulting from the modulation and also because the lifetime of SiH3 radicals is much longer than those of SiHn radicals (n=0-2).

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Effects of low-frequency modulation on rf discharge chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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