Effects of hydrogen passivation on near-infrared photodetection of n-type β-FeSi2/p-type si heterojunction photodiodes

Nathaporn Promros; Kyohei Yamashita; Ryuhei Iwasaki; Tsuyoshi Yoshitake

doi:10.1143/JJAP.51.108006

Effects of hydrogen passivation on near-infrared photodetection of n-type β-FeSi2/p-type si heterojunction photodiodes

Nathaporn Promros, Kyohei Yamashita, Ryuhei Iwasaki, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Hydrogen passivation was applied to the initial epitaxial growth of n-typeβ-FeSi2 thin films on p-type Si(111) substrates. Such passivation was applied at different gas inflow H2/Ar ratios ranging from 0 to 1.0. The photodetection performance of the photodiode fabricated at the optimum ratio of 0.2 was markedly improved as compared with those of the other samples. The quantum efficiency and detectivity were 2.08% and 5.40×109 cm Hz1=2/W-1, respectively. The enhanced photodetective performance should be mainly because dangling bonds that act as trap centers for photocarriers are effectively inactivated by the passivation.

Original language	English
Article number	108006
Journal	Japanese journal of applied physics
Volume	51
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.51.108006
Publication status	Published - Oct 2012

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "Hydrogen passivation was applied to the initial epitaxial growth of n-typeβ-FeSi2 thin films on p-type Si(111) substrates. Such passivation was applied at different gas inflow H2/Ar ratios ranging from 0 to 1.0. The photodetection performance of the photodiode fabricated at the optimum ratio of 0.2 was markedly improved as compared with those of the other samples. The quantum efficiency and detectivity were 2.08% and 5.40×109 cm Hz1=2/W-1, respectively. The enhanced photodetective performance should be mainly because dangling bonds that act as trap centers for photocarriers are effectively inactivated by the passivation.",

author = "Nathaporn Promros and Kyohei Yamashita and Ryuhei Iwasaki and Tsuyoshi Yoshitake",

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AU - Promros, Nathaporn

AU - Yamashita, Kyohei

AU - Iwasaki, Ryuhei

AU - Yoshitake, Tsuyoshi

PY - 2012/10

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AB - Hydrogen passivation was applied to the initial epitaxial growth of n-typeβ-FeSi2 thin films on p-type Si(111) substrates. Such passivation was applied at different gas inflow H2/Ar ratios ranging from 0 to 1.0. The photodetection performance of the photodiode fabricated at the optimum ratio of 0.2 was markedly improved as compared with those of the other samples. The quantum efficiency and detectivity were 2.08% and 5.40×109 cm Hz1=2/W-1, respectively. The enhanced photodetective performance should be mainly because dangling bonds that act as trap centers for photocarriers are effectively inactivated by the passivation.

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Effects of hydrogen passivation on near-infrared photodetection of n-type β-FeSi2/p-type si heterojunction photodiodes

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