Effects of hydrogen dilution on ZnO thin films fabricated via nitrogen-mediated crystallization

Iping Suhariadi, Koichi Matsushima, Kazunori Kuwahara, Koichi Oshikawa, Daisuke Yamashita, Hyunwoong Seo, Giichiro Uchida, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, Sven Bornholdt, Holger Kersten, Harm Wulff, Naho Itagaki

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12 Citations (Scopus)


Hydrogenated ZnO thin films have been successfully deposited on glass substrates via a nitrogen mediated crystallization (NMC) method utilizing RF sputtering. Here we aim to study the crystallinity and electrical properties of hydrogenated NMC-ZnO films in correlation with substrate temperature and H 2 flow rate. XRD measurements reveal that all the deposited films exhibit strongly preferred (001) orientation. The integral breadth of the (002) peak from the hydrogenated NMC-ZnO films is smaller than that of the conventional hydrogenated ZnO films fabricated without nitrogen. Furthermore, the crystallinity and surface morphology of the hydrogenated NMC-ZnO films are improved by increasing substrate temperature to 400 °C, where the smallest integral breadth of (002) 2θ-ω scans of 0.83° has been obtained. By utilizing the hydrogenated NMCZnO films as buffer layers, the crystallinity of ZnO:Al (AZO) films is also improved. The resistivity of AZO films on NMC-ZnO buffer layers decreases with increasing H2 flow rate during the sputter deposition of buffer layers from 0 to 5 sccm. At a H2 flow rate of 5 sccm, 20-nm-thick AZO films with low resistivity of 1.5 × 10.3 Ωcm have been obtained.

Original languageEnglish
Article number01AC08
JournalJapanese journal of applied physics
Issue number1 PART2
Publication statusPublished - Jan 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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