TY - JOUR
T1 - Effects of hydrogen dilution on ZnO thin films fabricated via nitrogen-mediated crystallization
AU - Suhariadi, Iping
AU - Matsushima, Koichi
AU - Kuwahara, Kazunori
AU - Oshikawa, Koichi
AU - Yamashita, Daisuke
AU - Seo, Hyunwoong
AU - Uchida, Giichiro
AU - Kamataki, Kunihiro
AU - Koga, Kazunori
AU - Shiratani, Masaharu
AU - Bornholdt, Sven
AU - Kersten, Holger
AU - Wulff, Harm
AU - Itagaki, Naho
PY - 2013/1
Y1 - 2013/1
N2 - Hydrogenated ZnO thin films have been successfully deposited on glass substrates via a nitrogen mediated crystallization (NMC) method utilizing RF sputtering. Here we aim to study the crystallinity and electrical properties of hydrogenated NMC-ZnO films in correlation with substrate temperature and H 2 flow rate. XRD measurements reveal that all the deposited films exhibit strongly preferred (001) orientation. The integral breadth of the (002) peak from the hydrogenated NMC-ZnO films is smaller than that of the conventional hydrogenated ZnO films fabricated without nitrogen. Furthermore, the crystallinity and surface morphology of the hydrogenated NMC-ZnO films are improved by increasing substrate temperature to 400 °C, where the smallest integral breadth of (002) 2θ-ω scans of 0.83° has been obtained. By utilizing the hydrogenated NMCZnO films as buffer layers, the crystallinity of ZnO:Al (AZO) films is also improved. The resistivity of AZO films on NMC-ZnO buffer layers decreases with increasing H2 flow rate during the sputter deposition of buffer layers from 0 to 5 sccm. At a H2 flow rate of 5 sccm, 20-nm-thick AZO films with low resistivity of 1.5 × 10.3 Ωcm have been obtained.
AB - Hydrogenated ZnO thin films have been successfully deposited on glass substrates via a nitrogen mediated crystallization (NMC) method utilizing RF sputtering. Here we aim to study the crystallinity and electrical properties of hydrogenated NMC-ZnO films in correlation with substrate temperature and H 2 flow rate. XRD measurements reveal that all the deposited films exhibit strongly preferred (001) orientation. The integral breadth of the (002) peak from the hydrogenated NMC-ZnO films is smaller than that of the conventional hydrogenated ZnO films fabricated without nitrogen. Furthermore, the crystallinity and surface morphology of the hydrogenated NMC-ZnO films are improved by increasing substrate temperature to 400 °C, where the smallest integral breadth of (002) 2θ-ω scans of 0.83° has been obtained. By utilizing the hydrogenated NMCZnO films as buffer layers, the crystallinity of ZnO:Al (AZO) films is also improved. The resistivity of AZO films on NMC-ZnO buffer layers decreases with increasing H2 flow rate during the sputter deposition of buffer layers from 0 to 5 sccm. At a H2 flow rate of 5 sccm, 20-nm-thick AZO films with low resistivity of 1.5 × 10.3 Ωcm have been obtained.
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U2 - 10.7567/JJAP.52.01AC08
DO - 10.7567/JJAP.52.01AC08
M3 - Article
AN - SCOPUS:84872870525
SN - 0021-4922
VL - 52
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 1 PART2
M1 - 01AC08
ER -