TY - GEN
T1 - Effects of hydrogen dilution on electron density in multi-hollow discharges with magnetic field for A-Si:H film deposition
AU - Koga, Kazunori
AU - Kawashima, Yuuki
AU - Nakahara, Kenta
AU - Matsunaga, Takeaki
AU - Nakamura, William Makoto
AU - Shiratani, Masaharu
PY - 2010
Y1 - 2010
N2 - We have measured dependence of electron density ne on hydrogen dilution ratio R= [H2]/([SiH4]+[H2]) in the multi-hollow discharges with or without magnetic fields to obtain information about the deposition rate enhancement due to hydrogen dilution and applying the magnetic fields. The R dependence of the ne did not correlate with that of the deposition rate. The ne exponentially decreases with a distance from the discharges z. The ne decreases faster for higher R. These complicated behaviors of ne may be explained by electron attachment to the clusters generated in the SiH4+H2 discharges. For R=0, the ne was almost same value regardless with or without magnetic fields. For R=1, ne with magnetic fields was 1/10 of that without magnetic fields. We also found that, for R=0, ne drastically decreased with increasing the z, while for R=1, ne showed a gradual decrease with z. The effects of applying magnetic fields on the deposition are unclear but applying the magnetic fields may affect the electron energy distribution.
AB - We have measured dependence of electron density ne on hydrogen dilution ratio R= [H2]/([SiH4]+[H2]) in the multi-hollow discharges with or without magnetic fields to obtain information about the deposition rate enhancement due to hydrogen dilution and applying the magnetic fields. The R dependence of the ne did not correlate with that of the deposition rate. The ne exponentially decreases with a distance from the discharges z. The ne decreases faster for higher R. These complicated behaviors of ne may be explained by electron attachment to the clusters generated in the SiH4+H2 discharges. For R=0, the ne was almost same value regardless with or without magnetic fields. For R=1, ne with magnetic fields was 1/10 of that without magnetic fields. We also found that, for R=0, ne drastically decreased with increasing the z, while for R=1, ne showed a gradual decrease with z. The effects of applying magnetic fields on the deposition are unclear but applying the magnetic fields may affect the electron energy distribution.
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U2 - 10.1109/PVSC.2010.5616502
DO - 10.1109/PVSC.2010.5616502
M3 - Conference contribution
AN - SCOPUS:78650146673
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3718
EP - 3721
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -