Effects of excitation frequency and H2 dilution on cluster generation in silane high-frequency discharges

Masaharu Shiratani; Kazunori Koga; Atsushi Harikai; Takanori Ogata; Yukio Watanabe

doi:10.1557/proc-762-a9.5

Effects of excitation frequency and H₂ dilution on cluster generation in silane high-frequency discharges

Masaharu Shiratani, Kazunori Koga, Atsushi Harikai, Takanori Ogata, Yukio Watanabe

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Reduction of cluster amount in silane discharges is the key to decreasing microstructure parameter R_α of a-Si:H films deposited with the discharges. The cluster amount is found to be reduced more than one order of magnitude using 60 MHz discharges instead of 28 MHz ones or using H₂ dilution of an H₂/ SiH₄ ratio of 5. The cluster-suppressed plasma CVD using 60 MHz discharges realizes deposition of a-Si:H films of Rα∼ 0 at a fairly high rate of 0.55 nm/s. Moreover, a downstream cluster collection method of high sensitivity has been developed for detecting a small amount of clusters formed under deposition conditions of Rα< 0.01.

Original language	English
Pages (from-to)	437-442
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	762
DOIs	https://doi.org/10.1557/proc-762-a9.5
Publication status	Published - 2003

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-762-a9.5

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abstract = "Reduction of cluster amount in silane discharges is the key to decreasing microstructure parameter Rα of a-Si:H films deposited with the discharges. The cluster amount is found to be reduced more than one order of magnitude using 60 MHz discharges instead of 28 MHz ones or using H2 dilution of an H2/ SiH4 ratio of 5. The cluster-suppressed plasma CVD using 60 MHz discharges realizes deposition of a-Si:H films of Rα∼ 0 at a fairly high rate of 0.55 nm/s. Moreover, a downstream cluster collection method of high sensitivity has been developed for detecting a small amount of clusters formed under deposition conditions of Rα< 0.01.",

author = "Masaharu Shiratani and Kazunori Koga and Atsushi Harikai and Takanori Ogata and Yukio Watanabe",

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T1 - Effects of excitation frequency and H2 dilution on cluster generation in silane high-frequency discharges

AU - Shiratani, Masaharu

AU - Koga, Kazunori

AU - Harikai, Atsushi

AU - Ogata, Takanori

AU - Watanabe, Yukio

PY - 2003

Y1 - 2003

N2 - Reduction of cluster amount in silane discharges is the key to decreasing microstructure parameter Rα of a-Si:H films deposited with the discharges. The cluster amount is found to be reduced more than one order of magnitude using 60 MHz discharges instead of 28 MHz ones or using H2 dilution of an H2/ SiH4 ratio of 5. The cluster-suppressed plasma CVD using 60 MHz discharges realizes deposition of a-Si:H films of Rα∼ 0 at a fairly high rate of 0.55 nm/s. Moreover, a downstream cluster collection method of high sensitivity has been developed for detecting a small amount of clusters formed under deposition conditions of Rα< 0.01.

AB - Reduction of cluster amount in silane discharges is the key to decreasing microstructure parameter Rα of a-Si:H films deposited with the discharges. The cluster amount is found to be reduced more than one order of magnitude using 60 MHz discharges instead of 28 MHz ones or using H2 dilution of an H2/ SiH4 ratio of 5. The cluster-suppressed plasma CVD using 60 MHz discharges realizes deposition of a-Si:H films of Rα∼ 0 at a fairly high rate of 0.55 nm/s. Moreover, a downstream cluster collection method of high sensitivity has been developed for detecting a small amount of clusters formed under deposition conditions of Rα< 0.01.

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JO - Materials Research Society Symposium - Proceedings

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Effects of excitation frequency and H₂ dilution on cluster generation in silane high-frequency discharges

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