TY - JOUR
T1 - Effects of changes in gas type and partial pressure on chemical mechanical polishing property of Si substrate
AU - Yin, Tao
AU - Kitamura, Kei
AU - Doi, Toshiro
AU - Kurokawa, Syuhei
AU - Zhou, Zhaozhong
AU - Feng, Kaiping
N1 - Funding Information:
This study was funded by National Natural Science Foundation of China(51275272), Basic Public Welfare Research Projects of Zhejiang Province(LGG18E050013), Talent Development Projects of Quzhou University (003216017), and Science and Technology Major Projects of Quzhou(2016Y008).
Publisher Copyright:
© 2019 The Electrochemical Society.
PY - 2019
Y1 - 2019
N2 - As a critical link of efficient and high-quality semiconductor substrate chemical mechanical polishing process, this paper focuses on the effects of the changes of the atmosphere to be processed on the CMP property of Si substrate. The experiment results showed that O2 existing in the processing atmosphere played an active role in facilitating material removal, and when the partial pressure of O2 in the processing atmosphere increased to 500kPa, the Si MRR of CMP reached 905nm/min. The Si material surface dissolutions in different atmospheres were analyzed respectively using SEM, EDS and light interference microscope. It was found that when O2 was sufficient, an extremely thin and tight oxide film was formed on the Si substrate surface, which prevented the furtherance of oxidation reaction, and compared with the Si-Si bonds, the Si-O bonds generated during this process were more inclined to undergo hydrolysis reaction; on the other hand, the O2 atmosphere caused the polishing pad, polishing particles and Si substrate to contact closely, increasing the mechanical friction and thus significantly improving the MRR. Based on the results of experiment and analysis, the Mechanisms of Si substrate polishing in high-pressure O2 atmosphere were summarized and a material removal model was built.
AB - As a critical link of efficient and high-quality semiconductor substrate chemical mechanical polishing process, this paper focuses on the effects of the changes of the atmosphere to be processed on the CMP property of Si substrate. The experiment results showed that O2 existing in the processing atmosphere played an active role in facilitating material removal, and when the partial pressure of O2 in the processing atmosphere increased to 500kPa, the Si MRR of CMP reached 905nm/min. The Si material surface dissolutions in different atmospheres were analyzed respectively using SEM, EDS and light interference microscope. It was found that when O2 was sufficient, an extremely thin and tight oxide film was formed on the Si substrate surface, which prevented the furtherance of oxidation reaction, and compared with the Si-Si bonds, the Si-O bonds generated during this process were more inclined to undergo hydrolysis reaction; on the other hand, the O2 atmosphere caused the polishing pad, polishing particles and Si substrate to contact closely, increasing the mechanical friction and thus significantly improving the MRR. Based on the results of experiment and analysis, the Mechanisms of Si substrate polishing in high-pressure O2 atmosphere were summarized and a material removal model was built.
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U2 - 10.1149/2.0201904jss
DO - 10.1149/2.0201904jss
M3 - Article
AN - SCOPUS:85072014785
SN - 2162-8769
VL - 8
SP - P293-P297
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 4
ER -