TY - JOUR
T1 - Effects of atmosphere and ultraviolet light irradiation on chemical mechanical polishing characteristics of SiC wafers
AU - Ohnishi, Osamu
AU - Doi, Toshiro
AU - Kurokawa, Syuhei
AU - Yamazaki, Tsutomu
AU - Uneda, Michio
AU - Yin, Tao
AU - Koshiyama, Isamu
AU - Ichikawa, Koichiro
AU - Aida, Hideo
PY - 2012/5
Y1 - 2012/5
N2 - To establish a high-efficiency and high-quality polishing process by controlling the workpiece environment, a prototype chemical mechanical polishing (CMP) machine that can perform double-side CMP simultaneously in a sealed pressure chamber was developed. Using this new machine, polishing experiments on single crystalline silicon carbide (SiC) wafers were carried out. The results showed that applying a highly pressurized O2 gas and ultraviolet light irradiation were effective in SiC CMP.
AB - To establish a high-efficiency and high-quality polishing process by controlling the workpiece environment, a prototype chemical mechanical polishing (CMP) machine that can perform double-side CMP simultaneously in a sealed pressure chamber was developed. Using this new machine, polishing experiments on single crystalline silicon carbide (SiC) wafers were carried out. The results showed that applying a highly pressurized O2 gas and ultraviolet light irradiation were effective in SiC CMP.
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U2 - 10.1143/JJAP.51.05EF05
DO - 10.1143/JJAP.51.05EF05
M3 - Article
AN - SCOPUS:84861515116
SN - 0021-4922
VL - 51
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 5 PART 2
M1 - 05EF05
ER -