Effects of Ar addition on breakdown voltage in a Si(CH3) 2(OCH3)2 RF discharge

Giichiro Uchida; Shota Nunomutra; Hiroshi Miyata; Shinya Iwashita; Dsaisuke Yamashita; Hidefumi Matsuzaki; Kunihiro Kamataki; Naho Itagaki; Kazunori Koga; Masaharu Shiratani

doi:10.1109/TENCON.2010.5686704

Effects of Ar addition on breakdown voltage in a Si(CH₃) ₂(OCH₃)₂ RF discharge

Giichiro Uchida
, Shota Nunomutra
, Hiroshi Miyata
, Shinya Iwashita
, Dsaisuke Yamashita
, Hidefumi Matsuzaki
, Kunihiro Kamataki
, Naho Itagaki
, Kazunori Koga
, Masaharu Shiratani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present detailed measurements on breakdown voltage (V_f) in a RF discharge with Si(CH₃)₂(OCH₃)₂ gas diluted with Ar. When Ar concentration (P_Ar) is increased, the V_f gradually decreases up to P_Ar = 50 %, and then is followed by a drastic decrease. The P_Ar dependence of V_f is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with P_Ar induces high emission of electrons from cathode surface, resulting in lowing V_f.

Original language	English
Title of host publication	TENCON 2010 - 2010 IEEE Region 10 Conference
Pages	2199-2201
Number of pages	3
DOIs	https://doi.org/10.1109/TENCON.2010.5686704
Publication status	Published - 2010
Event	2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan Duration: Nov 21 2010 → Nov 24 2010

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON

Other

Other	2010 IEEE Region 10 Conference, TENCON 2010
Country/Territory	Japan
City	Fukuoka
Period	11/21/10 → 11/24/10

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TENCON.2010.5686704

Cite this

Uchida, G., Nunomutra, S., Miyata, H., Iwashita, S., Yamashita, D., Matsuzaki, H., Kamataki, K., Itagaki, N., Koga, K., & Shiratani, M. (2010). Effects of Ar addition on breakdown voltage in a Si(CH₃) ₂(OCH₃)₂ RF discharge. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 2199-2201). Article 5686704 (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2010.5686704

Effects of Ar addition on breakdown voltage in a Si(CH₃) ₂(OCH₃)₂ RF discharge. / Uchida, Giichiro; Nunomutra, Shota; Miyata, Hiroshi et al.
TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 2199-2201 5686704 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uchida, G, Nunomutra, S, Miyata, H, Iwashita, S, Yamashita, D, Matsuzaki, H, Kamataki, K , Itagaki, N , Koga, K & Shiratani, M 2010, Effects of Ar addition on breakdown voltage in a Si(CH₃) ₂(OCH₃)₂ RF discharge. in TENCON 2010 - 2010 IEEE Region 10 Conference., 5686704, IEEE Region 10 Annual International Conference, Proceedings/TENCON, pp. 2199-2201, 2010 IEEE Region 10 Conference, TENCON 2010, Fukuoka, Japan, 11/21/10. https://doi.org/10.1109/TENCON.2010.5686704

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abstract = "We present detailed measurements on breakdown voltage (Vf) in a RF discharge with Si(CH3)2(OCH3)2 gas diluted with Ar. When Ar concentration (PAr) is increased, the Vf gradually decreases up to PAr = 50 \%, and then is followed by a drastic decrease. The PAr dependence of Vf is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with PAr induces high emission of electrons from cathode surface, resulting in lowing Vf.",

author = "Giichiro Uchida and Shota Nunomutra and Hiroshi Miyata and Shinya Iwashita and Dsaisuke Yamashita and Hidefumi Matsuzaki and Kunihiro Kamataki and Naho Itagaki and Kazunori Koga and Masaharu Shiratani",

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AU - Uchida, Giichiro

AU - Nunomutra, Shota

AU - Miyata, Hiroshi

AU - Iwashita, Shinya

AU - Yamashita, Dsaisuke

AU - Matsuzaki, Hidefumi

AU - Kamataki, Kunihiro

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

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N2 - We present detailed measurements on breakdown voltage (Vf) in a RF discharge with Si(CH3)2(OCH3)2 gas diluted with Ar. When Ar concentration (PAr) is increased, the Vf gradually decreases up to PAr = 50 %, and then is followed by a drastic decrease. The PAr dependence of Vf is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with PAr induces high emission of electrons from cathode surface, resulting in lowing Vf.

AB - We present detailed measurements on breakdown voltage (Vf) in a RF discharge with Si(CH3)2(OCH3)2 gas diluted with Ar. When Ar concentration (PAr) is increased, the Vf gradually decreases up to PAr = 50 %, and then is followed by a drastic decrease. The PAr dependence of Vf is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with PAr induces high emission of electrons from cathode surface, resulting in lowing Vf.

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