TY - GEN
T1 - Effect of trace phosphorus on the dross formation in tin-copper-nickel wave solder
AU - Xuan, Quy Tran
AU - Mohd Salleh, Mohd Arif Anuar
AU - McDonald, Stuart D.
AU - Nogita, Kazuhiro
N1 - Funding Information:
This research had been conducted under an international cooperative research program between the University of Queensland, Australia and Nihon Superior Company, Japan. The Synchrotron XRPD experiment was performed on the Powder Diffraction beamline at the Australian Synchrotron facility in Australia.
Publisher Copyright:
© 2018 Trans Tech Publications, Switzerland.
PY - 2018
Y1 - 2018
N2 - Additions of trace elements such as Phosphorus (P) and Germanium (Ge) are common practice to improve the oxidation resistance in Tin-Copper (Sn-Cu) wave solder systems, however, little insights are available regarding their combined role. In this article, the effect of trace P (<100ppm), in the presence of Ge (<100ppm), on the phase composition and microstructure of Sn-Cu-Ni wave solder dross is studied using various techniques including Synchrotron XRPD, SEM, FIB and TEM. We find that P additions, in the presence of Ge, result in the formations of SnO, SnO2 and Ni2SnP intermetallic in the dross whereas only SnO is present in the P-free equivalent. The crystal structure of Ni2SnP is identified as orthorhombic with the space group Pnma. Based on the findings, it is evident that P not only influences the oxidation state of tin oxides but also reduces the concentration of effective Ni in the alloys via the formation of Ni2SnP intermetallic.
AB - Additions of trace elements such as Phosphorus (P) and Germanium (Ge) are common practice to improve the oxidation resistance in Tin-Copper (Sn-Cu) wave solder systems, however, little insights are available regarding their combined role. In this article, the effect of trace P (<100ppm), in the presence of Ge (<100ppm), on the phase composition and microstructure of Sn-Cu-Ni wave solder dross is studied using various techniques including Synchrotron XRPD, SEM, FIB and TEM. We find that P additions, in the presence of Ge, result in the formations of SnO, SnO2 and Ni2SnP intermetallic in the dross whereas only SnO is present in the P-free equivalent. The crystal structure of Ni2SnP is identified as orthorhombic with the space group Pnma. Based on the findings, it is evident that P not only influences the oxidation state of tin oxides but also reduces the concentration of effective Ni in the alloys via the formation of Ni2SnP intermetallic.
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U2 - 10.4028/www.scientific.net/SSP.273.9
DO - 10.4028/www.scientific.net/SSP.273.9
M3 - Conference contribution
AN - SCOPUS:85045963972
SN - 9783035713244
T3 - Solid State Phenomena
SP - 9
EP - 13
BT - Electronic Packaging Interconnect Technology
A2 - Nogita, Kazuhiro
A2 - Mohd Salleh, Mohd Arif Anuar
A2 - Abdullah, Mohd Mustafa Al Bakri
A2 - Tahir, Muhammad Faheem Mohd
A2 - Jamaludin, Liyana
PB - Trans Tech Publications Ltd
T2 - Electronic Packaging Interconnect Technology Symposium, EPITS 2017
Y2 - 1 November 2017 through 2 November 2017
ER -