Effect of thermal strain on domain fraction in a-/b-axis-oriented epitaxial Bi4Ti3O12 films

Takayuki Watanabe; Hitoshi Morioka; Shoji Okamoto; Masatake Takahashi; Yuji Noguchi; Masaru Miyayama; Hiroshi Funakubo

doi:10.1557/proc-784-c4.2

Effect of thermal strain on domain fraction in a-/b-axis-oriented epitaxial Bi₄Ti₃O₁₂ films

Takayuki Watanabe
, Hitoshi Morioka
, Shoji Okamoto
, Masatake Takahashi
, Yuji Noguchi
, Masaru Miyayama
, Hiroshi Funakubo

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

a-/b-axis-oriented epitaxial Bi₄Ti₃O₁₂ and neodymiura-substituted Bi₄Ti₃O₁₂ films with a different a-domain fraction, V₍₁₀₀₎/[V₍₁₀₀₎+V( ₀₁₀)], were grown by metalorganic chemical vapor deposition above the phase transition temperature. It was demonstrated that the saturation polarization observed for the a-/b-axis-oriented film is proportional to the a-domain fraction estimated by x-ray diffraction. The liner relationship passing through the origin revealed that the 90° domain switching by an external electric field hardly occurred. The extrapolation gave spontaneous polarization of 58 μC/cm for a pure a-axis-oriented (Bi_3.5Nd _0.5)Ti₃O₁₂ film. The domain fraction was investigated as a function of thermal strain originated from a difference in thermal expansion coefficient between the film and substrates. The domain fraction of the films changed with the thermal strain along the in-plane [010] in tetragonal a-axis-oriented films as well as epitaxially grown tetragonal Pb(Zr,Ti)O₃ films.

Original language	English
Pages (from-to)	109-114
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	784
DOIs	https://doi.org/10.1557/proc-784-c4.2
Publication status	Published - 2003
Externally published	Yes
Event	Ferroelectric Thin Films XII - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-784-c4.2

Cite this

@article{9ce733307cf043fdb5282dbfd71dfa2c,

title = "Effect of thermal strain on domain fraction in a-/b-axis-oriented epitaxial Bi4Ti3O12 films",

abstract = "a-/b-axis-oriented epitaxial Bi4Ti3O12 and neodymiura-substituted Bi4Ti3O12 films with a different a-domain fraction, V(100)/[V(100)+V( 010)], were grown by metalorganic chemical vapor deposition above the phase transition temperature. It was demonstrated that the saturation polarization observed for the a-/b-axis-oriented film is proportional to the a-domain fraction estimated by x-ray diffraction. The liner relationship passing through the origin revealed that the 90° domain switching by an external electric field hardly occurred. The extrapolation gave spontaneous polarization of 58 μC/cm for a pure a-axis-oriented (Bi3.5Nd 0.5)Ti3O12 film. The domain fraction was investigated as a function of thermal strain originated from a difference in thermal expansion coefficient between the film and substrates. The domain fraction of the films changed with the thermal strain along the in-plane [010] in tetragonal a-axis-oriented films as well as epitaxially grown tetragonal Pb(Zr,Ti)O3 films.",

author = "Takayuki Watanabe and Hitoshi Morioka and Shoji Okamoto and Masatake Takahashi and Yuji Noguchi and Masaru Miyayama and Hiroshi Funakubo",

year = "2003",

doi = "10.1557/proc-784-c4.2",

language = "English",

volume = "784",

pages = "109--114",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Ferroelectric Thin Films XII ; Conference date: 01-12-2003 Through 04-12-2003",

}

TY - JOUR

T1 - Effect of thermal strain on domain fraction in a-/b-axis-oriented epitaxial Bi4Ti3O12 films

AU - Watanabe, Takayuki

AU - Morioka, Hitoshi

AU - Okamoto, Shoji

AU - Takahashi, Masatake

AU - Noguchi, Yuji

AU - Miyayama, Masaru

AU - Funakubo, Hiroshi

PY - 2003

Y1 - 2003

N2 - a-/b-axis-oriented epitaxial Bi4Ti3O12 and neodymiura-substituted Bi4Ti3O12 films with a different a-domain fraction, V(100)/[V(100)+V( 010)], were grown by metalorganic chemical vapor deposition above the phase transition temperature. It was demonstrated that the saturation polarization observed for the a-/b-axis-oriented film is proportional to the a-domain fraction estimated by x-ray diffraction. The liner relationship passing through the origin revealed that the 90° domain switching by an external electric field hardly occurred. The extrapolation gave spontaneous polarization of 58 μC/cm for a pure a-axis-oriented (Bi3.5Nd 0.5)Ti3O12 film. The domain fraction was investigated as a function of thermal strain originated from a difference in thermal expansion coefficient between the film and substrates. The domain fraction of the films changed with the thermal strain along the in-plane [010] in tetragonal a-axis-oriented films as well as epitaxially grown tetragonal Pb(Zr,Ti)O3 films.

AB - a-/b-axis-oriented epitaxial Bi4Ti3O12 and neodymiura-substituted Bi4Ti3O12 films with a different a-domain fraction, V(100)/[V(100)+V( 010)], were grown by metalorganic chemical vapor deposition above the phase transition temperature. It was demonstrated that the saturation polarization observed for the a-/b-axis-oriented film is proportional to the a-domain fraction estimated by x-ray diffraction. The liner relationship passing through the origin revealed that the 90° domain switching by an external electric field hardly occurred. The extrapolation gave spontaneous polarization of 58 μC/cm for a pure a-axis-oriented (Bi3.5Nd 0.5)Ti3O12 film. The domain fraction was investigated as a function of thermal strain originated from a difference in thermal expansion coefficient between the film and substrates. The domain fraction of the films changed with the thermal strain along the in-plane [010] in tetragonal a-axis-oriented films as well as epitaxially grown tetragonal Pb(Zr,Ti)O3 films.

UR - https://www.scopus.com/pages/publications/2942707893

UR - https://www.scopus.com/pages/publications/2942707893#tab=citedBy

U2 - 10.1557/proc-784-c4.2

DO - 10.1557/proc-784-c4.2

M3 - Conference article

AN - SCOPUS:2942707893

SN - 0272-9172

VL - 784

SP - 109

EP - 114

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films XII

Y2 - 1 December 2003 through 4 December 2003

ER -

Effect of thermal strain on domain fraction in a-/b-axis-oriented epitaxial Bi₄Ti₃O₁₂ films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this