Effect of thermal strain on domain fraction in a-/b-axis-oriented epitaxial Bi4Ti3O12 films

Takayuki Watanabe, Hitoshi Morioka, Shoji Okamoto, Masatake Takahashi, Yuji Noguchi, Masaru Miyayama, Hiroshi Funakubo

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


a-/b-axis-oriented epitaxial Bi4Ti3O12 and neodymiura-substituted Bi4Ti3O12 films with a different a-domain fraction, V(100)/[V(100)+V( 010)], were grown by metalorganic chemical vapor deposition above the phase transition temperature. It was demonstrated that the saturation polarization observed for the a-/b-axis-oriented film is proportional to the a-domain fraction estimated by x-ray diffraction. The liner relationship passing through the origin revealed that the 90° domain switching by an external electric field hardly occurred. The extrapolation gave spontaneous polarization of 58 μC/cm for a pure a-axis-oriented (Bi3.5Nd 0.5)Ti3O12 film. The domain fraction was investigated as a function of thermal strain originated from a difference in thermal expansion coefficient between the film and substrates. The domain fraction of the films changed with the thermal strain along the in-plane [010] in tetragonal a-axis-oriented films as well as epitaxially grown tetragonal Pb(Zr,Ti)O3 films.

Original languageEnglish
Pages (from-to)109-114
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2003
Externally publishedYes
EventFerroelectric Thin Films XII - Boston, MA, United States
Duration: Dec 1 2003Dec 4 2003

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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