Effect of Subthreshold Slope on Sensitivity of MOS-HEMT Square Law Detector for THz Waves

Hiromu Kojima; Daishi Kido; Haruichi Kanaya; Hiroyuki Ishii; Tatsuro Maeda; Mutsuo Ogura; Tanemasa Asano

doi:10.1109/TENCON.2018.8650131

Effect of Subthreshold Slope on Sensitivity of MOS-HEMT Square Law Detector for THz Waves

Hiromu Kojima, Daishi Kido, Haruichi Kanaya, Hiroyuki Ishii, Tatsuro Maeda, Mutsuo Ogura, Tanemasa Asano

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Effects of the subthreshold slope of transistor switching on the sensitivity of the square law detector composed of a high electron mobility transistor (HEMT) to detect terahertz waves have been investigated. Theoretical analysis starting from the unified charge control model of channel carriers has been carried out, which comes down to mathematical formulae suggesting that the subthreshold slope significantly affects the output voltage and the sensitivity of the square law detector. Square law detectors have been fabricated using HEMT with a MOS structured gate on glass substrate to detect 1.0 THz waves. HEMT was composed of InGaAs/InAs/InGaAs double hetero-structured channel. Detection tests using the MOS-HEMT square law detector have clearly shown that the output voltage increases with the subthreshold slope.

Original language	English
Title of host publication	Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1049-1052
Number of pages	4
ISBN (Electronic)	9781538654576
DOIs	https://doi.org/10.1109/TENCON.2018.8650131
Publication status	Published - Jul 2 2018
Event	2018 IEEE Region 10 Conference, TENCON 2018 - Jeju, Korea, Republic of Duration: Oct 28 2018 → Oct 31 2018

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON
Volume	2018-October
ISSN (Print)	2159-3442
ISSN (Electronic)	2159-3450

Conference

Conference	2018 IEEE Region 10 Conference, TENCON 2018
Country/Territory	Korea, Republic of
City	Jeju
Period	10/28/18 → 10/31/18

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TENCON.2018.8650131

Cite this

Kojima, H., Kido, D., Kanaya, H., Ishii, H., Maeda, T., Ogura, M., & Asano, T. (2018). Effect of Subthreshold Slope on Sensitivity of MOS-HEMT Square Law Detector for THz Waves. In Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference (pp. 1049-1052). Article 8650131 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2018-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TENCON.2018.8650131

Effect of Subthreshold Slope on Sensitivity of MOS-HEMT Square Law Detector for THz Waves. / Kojima, Hiromu; Kido, Daishi; Kanaya, Haruichi et al.
Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1049-1052 8650131 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2018-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kojima, H, Kido, D, Kanaya, H, Ishii, H, Maeda, T, Ogura, M & Asano, T 2018, Effect of Subthreshold Slope on Sensitivity of MOS-HEMT Square Law Detector for THz Waves. in Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference., 8650131, IEEE Region 10 Annual International Conference, Proceedings/TENCON, vol. 2018-October, Institute of Electrical and Electronics Engineers Inc., pp. 1049-1052, 2018 IEEE Region 10 Conference, TENCON 2018, Jeju, Korea, Republic of, 10/28/18. https://doi.org/10.1109/TENCON.2018.8650131

Kojima H, Kido D, Kanaya H, Ishii H, Maeda T, Ogura M et al. Effect of Subthreshold Slope on Sensitivity of MOS-HEMT Square Law Detector for THz Waves. In Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1049-1052. 8650131. (IEEE Region 10 Annual International Conference, Proceedings/TENCON). doi: 10.1109/TENCON.2018.8650131

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title = "Effect of Subthreshold Slope on Sensitivity of MOS-HEMT Square Law Detector for THz Waves",

abstract = "Effects of the subthreshold slope of transistor switching on the sensitivity of the square law detector composed of a high electron mobility transistor (HEMT) to detect terahertz waves have been investigated. Theoretical analysis starting from the unified charge control model of channel carriers has been carried out, which comes down to mathematical formulae suggesting that the subthreshold slope significantly affects the output voltage and the sensitivity of the square law detector. Square law detectors have been fabricated using HEMT with a MOS structured gate on glass substrate to detect 1.0 THz waves. HEMT was composed of InGaAs/InAs/InGaAs double hetero-structured channel. Detection tests using the MOS-HEMT square law detector have clearly shown that the output voltage increases with the subthreshold slope.",

author = "Hiromu Kojima and Daishi Kido and Haruichi Kanaya and Hiroyuki Ishii and Tatsuro Maeda and Mutsuo Ogura and Tanemasa Asano",

note = "Funding Information: This work was partly supported by JST CREST (No. JPMJCR1431). Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE Region 10 Conference, TENCON 2018 ; Conference date: 28-10-2018 Through 31-10-2018",

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AU - Maeda, Tatsuro

AU - Ogura, Mutsuo

AU - Asano, Tanemasa

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AB - Effects of the subthreshold slope of transistor switching on the sensitivity of the square law detector composed of a high electron mobility transistor (HEMT) to detect terahertz waves have been investigated. Theoretical analysis starting from the unified charge control model of channel carriers has been carried out, which comes down to mathematical formulae suggesting that the subthreshold slope significantly affects the output voltage and the sensitivity of the square law detector. Square law detectors have been fabricated using HEMT with a MOS structured gate on glass substrate to detect 1.0 THz waves. HEMT was composed of InGaAs/InAs/InGaAs double hetero-structured channel. Detection tests using the MOS-HEMT square law detector have clearly shown that the output voltage increases with the subthreshold slope.

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Effect of Subthreshold Slope on Sensitivity of MOS-HEMT Square Law Detector for THz Waves

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