@inproceedings{e7275b20681a477e99787bb98fdbaa0f,
title = "Effect of stress on activation during the formation of np junction in co-implanted germanium",
abstract = "Higher carrier mobility in germanium has made germanium as a favorable candidate to replace silicon as a device substrate for a high-performance device. Further optimization on fabrication process parameters in germanium involving ion-implantation and thermal annealing is important to form a highly activated np junction. Co-implantation technique has prompted interest due to its reported stress-induced activation; which may be due to the implementation of two atoms different in size. Combining with ultra-fast/high temperature of laser thermal annealing may promotes the improvement in activation and damage removal. This works focused on introducing stress to the germanium substrate through co-implantation of dopant ions, follows by laser thermal annealing to activate and remove the implanted damages. It is found that Raman shift of the annealed co-implanted sample can be observed with 0.2% increase in the strain value, when comparing to the single implanted sample. 12% improvement of sheet resistance can also be observed, which may be related due to the increase in stress.",
author = "Rashid, {Nur Nadhirah} and Aziz, {Umar Abdul} and Aid, {Siti Rahmah} and Suwa Akira and Hiroshi Ikenoue and Fang Xie and Anthony Centeno",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Workshop on Junction Technology, IWJT 2018 ; Conference date: 08-03-2018 Through 09-03-2018",
year = "2018",
month = apr,
day = "2",
doi = "10.1109/IWJT.2018.8330283",
language = "English",
series = "2018 18th International Workshop on Junction Technology, IWJT 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--3",
editor = "Guo-Ping Ru and Bing-Zong Li and Yu-Long Jiang and Xin-Ping Qu",
booktitle = "2018 18th International Workshop on Junction Technology, IWJT 2018",
address = "United States",
}