Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate

Hidenori Higashi; Yuichi Fujita; Makoto Kawano; Junya Hirayama; Shinya Yamada; Jong Hyeok Park; Taizoh Sadoh; Masanobu Miyao; Kohei Hamaya

doi:10.1109/ISTDM.2014.6874683

Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe₃Si films on a flexible substrate

Hidenori Higashi, Yuichi Fujita, Makoto Kawano, Junya Hirayama, Shinya Yamada, Jong Hyeok Park, Taizoh Sadoh, Masanobu Miyao, Kohei Hamaya

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

By an insertion of a Ge(Sn) layer and its CMP treatments, we have improved the crystalline and magnetic characteristics of one of the Heusler-compounds, Fe₃Si, on (111)-oriented Ge on a flexible substrate. This work is a first step of high-performance flexible spintronics for flexible system-in-display devices.

Original language	English
Title of host publication	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Publisher	IEEE Computer Society
Pages	59-60
Number of pages	2
ISBN (Print)	9781479954285
DOIs	https://doi.org/10.1109/ISTDM.2014.6874683
Publication status	Published - 2014
Event	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore Duration: Jun 2 2014 → Jun 4 2014

Publication series

Name	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country/Territory	Singapore
City	Singapore
Period	6/2/14 → 6/4/14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2014.6874683

Cite this

Higashi, H., Fujita, Y., Kawano, M., Hirayama, J., Yamada, S., Park, J. H., Sadoh, T., Miyao, M., & Hamaya, K. (2014). Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe₃Si films on a flexible substrate. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 59-60). Article 6874683 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874683

Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe₃Si films on a flexible substrate. / Higashi, Hidenori; Fujita, Yuichi; Kawano, Makoto et al.
2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 59-60 6874683 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Higashi, H, Fujita, Y, Kawano, M, Hirayama, J, Yamada, S, Park, JH, Sadoh, T, Miyao, M & Hamaya, K 2014, Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe₃Si films on a flexible substrate. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874683, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 59-60, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 6/2/14. https://doi.org/10.1109/ISTDM.2014.6874683

Higashi H, Fujita Y, Kawano M, Hirayama J, Yamada S, Park JH et al. Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe₃Si films on a flexible substrate. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 59-60. 6874683. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). doi: 10.1109/ISTDM.2014.6874683

Higashi, Hidenori ; Fujita, Yuichi ; Kawano, Makoto et al. / Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe₃Si films on a flexible substrate. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. pp. 59-60 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

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