Effect of pressure on first-order valence transition of Yb 1-xyxInCu4

Wei Zhang, Kazuyoshi Yoshimura, Akihiro Mitsuda, Tsuneaki Goto

Research output: Contribution to journalArticlepeer-review


YbInCu4 exhibits a first-order valence transition at H v ≈ 33 T with 0.45% decrease of volume as increasing the magnetic field. The inherent chemical pressure in Yb1-xYxInCu 4 system is discussed as negative on valence transition of YbInCu4. The external pressure effect on Hv of Yb 1-xYxInCu4 is measured as dHv/dP ≈ - 1 T kbar-1.

Original languageEnglish
Pages (from-to)603-604
Number of pages2
JournalPhysica B: Condensed Matter
Issue numberII
Publication statusPublished - May 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Effect of pressure on first-order valence transition of Yb 1-xyxInCu4'. Together they form a unique fingerprint.

Cite this